Abstract
The development of novel functional materials holds enormous potential in various fields. This preview highlights the application of theoretical methods and machine learning techniques in a recent issue of Patterns, focusing on the exploration of two-dimensional doped tellurene and the efficient screening of suitable candidates for fin field-effect transistors.
Original language | English |
---|---|
Pages (from-to) | 2553-2555 |
Number of pages | 3 |
Journal | Matter |
Volume | 6 |
Issue number | 8 |
DOIs |
|
Publication status | Published - 2 Aug 2023 |