Lift-off protocols for thin films for use in EXAFS experiments

S. Decoster; C. J. Glover; B. Johannessen; R. Giulian; D. J. Sprouster; P. Kluth; L. L. Araujo; Z. S. Hussain; C. Schnohr; H. Salama; F. Kremer; K. Temst; A. Vantomme; M. C. Ridgway

doi:10.1107/S0909049513005049

Lift-off protocols for thin films for use in EXAFS experiments

S. Decoster^*, C. J. Glover, B. Johannessen, R. Giulian, D. J. Sprouster, P. Kluth, L. L. Araujo, Z. S. Hussain, C. Schnohr, H. Salama, F. Kremer, K. Temst, A. Vantomme, M. C. Ridgway

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Lift-off protocols for thin films for improved extended X-ray absorption fine structure (EXAFS) measurements are presented. Using wet chemical etching of the substrate or the interlayer between the thin film and the substrate, stand-alone high-quality micrometer-thin films are obtained. Protocols for the single-crystalline semiconductors GeSi, InGaAs, InGaP, InP and GaAs, the amorphous semiconductors GaAs, GeSi and InP and the dielectric materials SiO2 and Si3N4 are presented. The removal of the substrate and the ability to stack the thin films yield benefits for EXAFS experiments in transmission as well as in fluorescence mode. Several cases are presented where this improved sample preparation procedure results in higher-quality EXAFS data compared with conventional sample preparation methods. This lift-off procedure can also be advantageous for other experimental techniques (e.g. small-angle X-ray scattering) that benefit from removing undesired contributions from the substrate.

Original language	English
Pages (from-to)	426-432
Number of pages	7
Journal	Journal of Synchrotron Radiation
Volume	20
Issue number	3
DOIs	https://doi.org/10.1107/S0909049513005049
Publication status	Published - May 2013

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title = "Lift-off protocols for thin films for use in EXAFS experiments",

abstract = "Lift-off protocols for thin films for improved extended X-ray absorption fine structure (EXAFS) measurements are presented. Using wet chemical etching of the substrate or the interlayer between the thin film and the substrate, stand-alone high-quality micrometer-thin films are obtained. Protocols for the single-crystalline semiconductors GeSi, InGaAs, InGaP, InP and GaAs, the amorphous semiconductors GaAs, GeSi and InP and the dielectric materials SiO2 and Si3N4 are presented. The removal of the substrate and the ability to stack the thin films yield benefits for EXAFS experiments in transmission as well as in fluorescence mode. Several cases are presented where this improved sample preparation procedure results in higher-quality EXAFS data compared with conventional sample preparation methods. This lift-off procedure can also be advantageous for other experimental techniques (e.g. small-angle X-ray scattering) that benefit from removing undesired contributions from the substrate.",

keywords = "EXAFS, dielectric, lift-off, semiconductor, thin film",

author = "S. Decoster and Glover, {C. J.} and B. Johannessen and R. Giulian and Sprouster, {D. J.} and P. Kluth and Araujo, {L. L.} and Hussain, {Z. S.} and C. Schnohr and H. Salama and F. Kremer and K. Temst and A. Vantomme and Ridgway, {M. C.}",

year = "2013",

month = may,

doi = "10.1107/S0909049513005049",

language = "English",

volume = "20",

pages = "426--432",

journal = "Journal of Synchrotron Radiation",

issn = "0909-0495",

publisher = "International Union of Crystallography",

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T1 - Lift-off protocols for thin films for use in EXAFS experiments

AU - Decoster, S.

AU - Glover, C. J.

AU - Johannessen, B.

AU - Giulian, R.

AU - Sprouster, D. J.

AU - Kluth, P.

AU - Araujo, L. L.

AU - Hussain, Z. S.

AU - Schnohr, C.

AU - Salama, H.

AU - Kremer, F.

AU - Temst, K.

AU - Vantomme, A.

AU - Ridgway, M. C.

PY - 2013/5

Y1 - 2013/5

N2 - Lift-off protocols for thin films for improved extended X-ray absorption fine structure (EXAFS) measurements are presented. Using wet chemical etching of the substrate or the interlayer between the thin film and the substrate, stand-alone high-quality micrometer-thin films are obtained. Protocols for the single-crystalline semiconductors GeSi, InGaAs, InGaP, InP and GaAs, the amorphous semiconductors GaAs, GeSi and InP and the dielectric materials SiO2 and Si3N4 are presented. The removal of the substrate and the ability to stack the thin films yield benefits for EXAFS experiments in transmission as well as in fluorescence mode. Several cases are presented where this improved sample preparation procedure results in higher-quality EXAFS data compared with conventional sample preparation methods. This lift-off procedure can also be advantageous for other experimental techniques (e.g. small-angle X-ray scattering) that benefit from removing undesired contributions from the substrate.

AB - Lift-off protocols for thin films for improved extended X-ray absorption fine structure (EXAFS) measurements are presented. Using wet chemical etching of the substrate or the interlayer between the thin film and the substrate, stand-alone high-quality micrometer-thin films are obtained. Protocols for the single-crystalline semiconductors GeSi, InGaAs, InGaP, InP and GaAs, the amorphous semiconductors GaAs, GeSi and InP and the dielectric materials SiO2 and Si3N4 are presented. The removal of the substrate and the ability to stack the thin films yield benefits for EXAFS experiments in transmission as well as in fluorescence mode. Several cases are presented where this improved sample preparation procedure results in higher-quality EXAFS data compared with conventional sample preparation methods. This lift-off procedure can also be advantageous for other experimental techniques (e.g. small-angle X-ray scattering) that benefit from removing undesired contributions from the substrate.

KW - EXAFS

KW - dielectric

KW - lift-off

KW - semiconductor

KW - thin film

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U2 - 10.1107/S0909049513005049

DO - 10.1107/S0909049513005049

M3 - Article

SN - 0909-0495

VL - 20

SP - 426

EP - 432

JO - Journal of Synchrotron Radiation

JF - Journal of Synchrotron Radiation

IS - 3

ER -

Lift-off protocols for thin films for use in EXAFS experiments

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