Light-induced-degradation defect independent of the boron concentration: Towards unifying admittance spectroscopy, photoluminescence and photoconductance lifetime spectroscopy results

Fiacre E. Rougieux; Chang Sun; Mattias Juhl

doi:10.1016/j.solmat.2020.110481

Light-induced-degradation defect independent of the boron concentration: Towards unifying admittance spectroscopy, photoluminescence and photoconductance lifetime spectroscopy results

Fiacre E. Rougieux^*, Chang Sun, Mattias Juhl

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Recent photoluminescence and admittance spectroscopy measurements point towards the defect responsible for Light-Induced Degradation (LID) being a shallow level. Dopant dependent lifetime spectroscopy and temperature dependent lifetime spectroscopy on the other hand reveal the existence of a deep level driving the recombination activity of the LID defects. There is an apparent disagreement between admittance spectroscopy results and lifetime spectroscopy results. Here we overcome this apparent disagreement and we show that a negative-U defect with one shallow level can explain both the doping dependent lifetime data and injection dependent data. The critical consequence of this model is that it readily explains the dependence of the LID defect on the hole concentration rather than the Boron concentration.

Original language	English
Article number	110481
Journal	Solar Energy Materials and Solar Cells
Volume	210
DOIs	https://doi.org/10.1016/j.solmat.2020.110481
Publication status	Published - 15 Jun 2020

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10.1016/j.solmat.2020.110481

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title = "Light-induced-degradation defect independent of the boron concentration: Towards unifying admittance spectroscopy, photoluminescence and photoconductance lifetime spectroscopy results",

abstract = "Recent photoluminescence and admittance spectroscopy measurements point towards the defect responsible for Light-Induced Degradation (LID) being a shallow level. Dopant dependent lifetime spectroscopy and temperature dependent lifetime spectroscopy on the other hand reveal the existence of a deep level driving the recombination activity of the LID defects. There is an apparent disagreement between admittance spectroscopy results and lifetime spectroscopy results. Here we overcome this apparent disagreement and we show that a negative-U defect with one shallow level can explain both the doping dependent lifetime data and injection dependent data. The critical consequence of this model is that it readily explains the dependence of the LID defect on the hole concentration rather than the Boron concentration.",

keywords = "Boron-oxygen defect, Defect, Lifetime spectroscopy, Light-induced-degradation, Recombination, Silicon",

author = "Rougieux, {Fiacre E.} and Chang Sun and Mattias Juhl",

note = "Publisher Copyright: {\textcopyright} 2020 Elsevier B.V.",

year = "2020",

month = jun,

day = "15",

doi = "10.1016/j.solmat.2020.110481",

language = "English",

volume = "210",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

publisher = "Elsevier B.V.",

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Light-induced-degradation defect independent of the boron concentration: Towards unifying admittance spectroscopy, photoluminescence and photoconductance lifetime spectroscopy results. / Rougieux, Fiacre E.; Sun, Chang; Juhl, Mattias.
In: Solar Energy Materials and Solar Cells, Vol. 210, 110481, 15.06.2020.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Light-induced-degradation defect independent of the boron concentration

T2 - Towards unifying admittance spectroscopy, photoluminescence and photoconductance lifetime spectroscopy results

AU - Rougieux, Fiacre E.

AU - Sun, Chang

AU - Juhl, Mattias

PY - 2020/6/15

Y1 - 2020/6/15

N2 - Recent photoluminescence and admittance spectroscopy measurements point towards the defect responsible for Light-Induced Degradation (LID) being a shallow level. Dopant dependent lifetime spectroscopy and temperature dependent lifetime spectroscopy on the other hand reveal the existence of a deep level driving the recombination activity of the LID defects. There is an apparent disagreement between admittance spectroscopy results and lifetime spectroscopy results. Here we overcome this apparent disagreement and we show that a negative-U defect with one shallow level can explain both the doping dependent lifetime data and injection dependent data. The critical consequence of this model is that it readily explains the dependence of the LID defect on the hole concentration rather than the Boron concentration.

AB - Recent photoluminescence and admittance spectroscopy measurements point towards the defect responsible for Light-Induced Degradation (LID) being a shallow level. Dopant dependent lifetime spectroscopy and temperature dependent lifetime spectroscopy on the other hand reveal the existence of a deep level driving the recombination activity of the LID defects. There is an apparent disagreement between admittance spectroscopy results and lifetime spectroscopy results. Here we overcome this apparent disagreement and we show that a negative-U defect with one shallow level can explain both the doping dependent lifetime data and injection dependent data. The critical consequence of this model is that it readily explains the dependence of the LID defect on the hole concentration rather than the Boron concentration.

KW - Boron-oxygen defect

KW - Defect

KW - Lifetime spectroscopy

KW - Light-induced-degradation

KW - Recombination

KW - Silicon

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U2 - 10.1016/j.solmat.2020.110481

DO - 10.1016/j.solmat.2020.110481

M3 - Article

SN - 0927-0248

VL - 210

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

M1 - 110481

ER -

Light-induced-degradation defect independent of the boron concentration: Towards unifying admittance spectroscopy, photoluminescence and photoconductance lifetime spectroscopy results

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