Light-Induced Positive and Negative Photoconductances of InAs Nanowires toward Rewritable Nonvolatile Memory

Xutao Zhang; Ziyuan Li; Xiaomei Yao; Hai Huang; Dongdong Wei; Chen Zhou; Zhou Tang; Xiaoming Yuan; Pingping Chen; Weida Hu; Jin Zou; Wei Lu; Lan Fu

doi:10.1021/acsaelm.9b00368

Light-Induced Positive and Negative Photoconductances of InAs Nanowires toward Rewritable Nonvolatile Memory

Xutao Zhang, Ziyuan Li, Xiaomei Yao, Hai Huang, Dongdong Wei, Chen Zhou, Zhou Tang, Xiaoming Yuan, Pingping Chen^*, Weida Hu, Jin Zou, Wei Lu^*, Lan Fu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Here, we demonstrate that single InAs nanowire (NW)-based field-effect transistor exhibits wavelength-selective switching between positive and negative photoresponses caused by abundant defect states on the NW surface. On this basis, by modifying the NW carrier transport behavior through the strong local electric field formed by polarized ferroelectric polymer P(VDF-TrFE), a rewritable NW memory device can be achieved with electrical bistability and low-power consumption when writing with different wavelength light pulses without any gate voltage. Our study clearly reveals the significant role of the NW surface states in not only photodetecting devices but also promising novel nonvolatile light-assisted memory devices for numerous future applications.

Original language	English
Pages (from-to)	1825-1831
Number of pages	7
Journal	ACS Applied Electronic Materials
Volume	1
Issue number	9
DOIs	https://doi.org/10.1021/acsaelm.9b00368
Publication status	Published - 24 Sept 2019

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title = "Light-Induced Positive and Negative Photoconductances of InAs Nanowires toward Rewritable Nonvolatile Memory",

abstract = "Here, we demonstrate that single InAs nanowire (NW)-based field-effect transistor exhibits wavelength-selective switching between positive and negative photoresponses caused by abundant defect states on the NW surface. On this basis, by modifying the NW carrier transport behavior through the strong local electric field formed by polarized ferroelectric polymer P(VDF-TrFE), a rewritable NW memory device can be achieved with electrical bistability and low-power consumption when writing with different wavelength light pulses without any gate voltage. Our study clearly reveals the significant role of the NW surface states in not only photodetecting devices but also promising novel nonvolatile light-assisted memory devices for numerous future applications.",

keywords = "InAs nanowires, MBE, field-effect transistor, rewritable nonvolatile memory, surface trapping states",

author = "Xutao Zhang and Ziyuan Li and Xiaomei Yao and Hai Huang and Dongdong Wei and Chen Zhou and Zhou Tang and Xiaoming Yuan and Pingping Chen and Weida Hu and Jin Zou and Wei Lu and Lan Fu",

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doi = "10.1021/acsaelm.9b00368",

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T1 - Light-Induced Positive and Negative Photoconductances of InAs Nanowires toward Rewritable Nonvolatile Memory

AU - Zhang, Xutao

AU - Li, Ziyuan

AU - Yao, Xiaomei

AU - Huang, Hai

AU - Wei, Dongdong

AU - Zhou, Chen

AU - Tang, Zhou

AU - Yuan, Xiaoming

AU - Chen, Pingping

AU - Hu, Weida

AU - Zou, Jin

AU - Lu, Wei

AU - Fu, Lan

PY - 2019/9/24

Y1 - 2019/9/24

N2 - Here, we demonstrate that single InAs nanowire (NW)-based field-effect transistor exhibits wavelength-selective switching between positive and negative photoresponses caused by abundant defect states on the NW surface. On this basis, by modifying the NW carrier transport behavior through the strong local electric field formed by polarized ferroelectric polymer P(VDF-TrFE), a rewritable NW memory device can be achieved with electrical bistability and low-power consumption when writing with different wavelength light pulses without any gate voltage. Our study clearly reveals the significant role of the NW surface states in not only photodetecting devices but also promising novel nonvolatile light-assisted memory devices for numerous future applications.

AB - Here, we demonstrate that single InAs nanowire (NW)-based field-effect transistor exhibits wavelength-selective switching between positive and negative photoresponses caused by abundant defect states on the NW surface. On this basis, by modifying the NW carrier transport behavior through the strong local electric field formed by polarized ferroelectric polymer P(VDF-TrFE), a rewritable NW memory device can be achieved with electrical bistability and low-power consumption when writing with different wavelength light pulses without any gate voltage. Our study clearly reveals the significant role of the NW surface states in not only photodetecting devices but also promising novel nonvolatile light-assisted memory devices for numerous future applications.

KW - InAs nanowires

KW - MBE

KW - field-effect transistor

KW - rewritable nonvolatile memory

KW - surface trapping states

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U2 - 10.1021/acsaelm.9b00368

DO - 10.1021/acsaelm.9b00368

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SN - 2637-6113

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EP - 1831

JO - ACS Applied Electronic Materials

JF - ACS Applied Electronic Materials

IS - 9

ER -

Light-Induced Positive and Negative Photoconductances of InAs Nanowires toward Rewritable Nonvolatile Memory

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