Light ion induced damage in CdTe and Hg(1 - X)Cd(x)Te epitaxial thin films

S. P. Russo; P. N. Johnston; R. G. Elliman; D. N. Jamieson

doi:10.1016/0168-583X(95)01373-3

Light ion induced damage in CdTe and Hg(1 - X)Cd(x)Te epitaxial thin films

S. P. Russo^*, P. N. Johnston, R. G. Elliman, D. N. Jamieson

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The effect of variation of MCT stoichiometry (x) on the damage induced by 2 MeV He ions has been measured by the comparison of damage accumulation in Hg_0.48Cd_0.52Te (MCT, x ≅ 0.52) and CdTe (MCT, x 1). The comparison of damage induced by irradiation in the random and channeled directions for MCT (x = 0.52) by 2 MeV He ions has also been measured. The results extend earlier work on light ion damage induced in MCT epitaxial thin films.

Original language	English
Pages (from-to)	218-222
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	113
Issue number	1-4
DOIs	https://doi.org/10.1016/0168-583X(95)01373-3
Publication status	Published - Jun 1996

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title = "Light ion induced damage in CdTe and Hg(1 - X)Cd(x)Te epitaxial thin films",

abstract = "The effect of variation of MCT stoichiometry (x) on the damage induced by 2 MeV He ions has been measured by the comparison of damage accumulation in Hg0.48Cd0.52Te (MCT, x ≅ 0.52) and CdTe (MCT, x 1). The comparison of damage induced by irradiation in the random and channeled directions for MCT (x = 0.52) by 2 MeV He ions has also been measured. The results extend earlier work on light ion damage induced in MCT epitaxial thin films.",

author = "Russo, {S. P.} and Johnston, {P. N.} and Elliman, {R. G.} and Jamieson, {D. N.}",

year = "1996",

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doi = "10.1016/0168-583X(95)01373-3",

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T1 - Light ion induced damage in CdTe and Hg(1 - X)Cd(x)Te epitaxial thin films

AU - Russo, S. P.

AU - Johnston, P. N.

AU - Elliman, R. G.

AU - Jamieson, D. N.

PY - 1996/6

Y1 - 1996/6

N2 - The effect of variation of MCT stoichiometry (x) on the damage induced by 2 MeV He ions has been measured by the comparison of damage accumulation in Hg0.48Cd0.52Te (MCT, x ≅ 0.52) and CdTe (MCT, x 1). The comparison of damage induced by irradiation in the random and channeled directions for MCT (x = 0.52) by 2 MeV He ions has also been measured. The results extend earlier work on light ion damage induced in MCT epitaxial thin films.

AB - The effect of variation of MCT stoichiometry (x) on the damage induced by 2 MeV He ions has been measured by the comparison of damage accumulation in Hg0.48Cd0.52Te (MCT, x ≅ 0.52) and CdTe (MCT, x 1). The comparison of damage induced by irradiation in the random and channeled directions for MCT (x = 0.52) by 2 MeV He ions has also been measured. The results extend earlier work on light ion damage induced in MCT epitaxial thin films.

UR - http://www.scopus.com/inward/record.url?scp=0030173305&partnerID=8YFLogxK

U2 - 10.1016/0168-583X(95)01373-3

DO - 10.1016/0168-583X(95)01373-3

M3 - Article

AN - SCOPUS:0030173305

SN - 0168-583X

VL - 113

SP - 218

EP - 222

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

ER -

Light ion induced damage in CdTe and Hg(1 - X)Cd(x)Te epitaxial thin films

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