Liquid-Metal Synthesized Ultrathin SnS Layers for High-Performance Broadband Photodetectors

Vaishnavi Krishnamurthi, Hareem Khan, Taimur Ahmed*, Ali Zavabeti, Sherif Abdulkader Tawfik, Shubhendra Kumar Jain, Michelle J.S. Spencer, Sivacarendran Balendhran, Kenneth B. Crozier, Ziyuan Li, Lan Fu, Md Mohiuddin, Mei Xian Low, Babar Shabbir, Andreas Boes, Arnan Mitchell, Christopher F. McConville, Yongxiang Li, Kourosh Kalantar-Zadeh, Nasir Mahmood*Sumeet Walia*

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    112 Citations (Scopus)

    Abstract

    Atomically thin materials face an ongoing challenge of scalability, hampering practical deployment despite their fascinating properties. Tin monosulfide (SnS), a low-cost, naturally abundant layered material with a tunable bandgap, displays properties of superior carrier mobility and large absorption coefficient at atomic thicknesses, making it attractive for electronics and optoelectronics. However, the lack of successful synthesis techniques to prepare large-area and stoichiometric atomically thin SnS layers (mainly due to the strong interlayer interactions) has prevented exploration of these properties for versatile applications. Here, SnS layers are printed with thicknesses varying from a single unit cell (0.8 nm) to multiple stacked unit cells (≈1.8 nm) synthesized from metallic liquid tin, with lateral dimensions on the millimeter scale. It is reveal that these large-area SnS layers exhibit a broadband spectral response ranging from deep-ultraviolet (UV) to near-infrared (NIR) wavelengths (i.e., 280–850 nm) with fast photodetection capabilities. For single-unit-cell-thick layered SnS, the photodetectors show upto three orders of magnitude higher responsivity (927 A W−1) than commercial photodetectors at a room-temperature operating wavelength of 660 nm. This study opens a new pathway to synthesize reproduceable nanosheets of large lateral sizes for broadband, high-performance photodetectors. It also provides important technological implications for scalable applications in integrated optoelectronic circuits, sensing, and biomedical imaging.

    Original languageEnglish
    Article number2004247
    JournalAdvanced Materials
    Volume32
    Issue number45
    DOIs
    Publication statusPublished - 12 Nov 2020

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