Local structure of implanted Pd in Si using PAC

D. A. Brett; R. Dogra; A. P. Byrne; M. C. Ridgway; J. Bartels; R. Vianden

doi:10.1007/s10751-005-9048-9

Local structure of implanted Pd in Si using PAC

D. A. Brett, R. Dogra^*, A. P. Byrne, M. C. Ridgway, J. Bartels, R. Vianden

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

TDPAC has been employed to study the local structure of implanted palladium in silicon utilizing 87-75 keV γ-γ cascade of probe nucleus ¹⁰⁰Pd. The observed hyperfine parameters revealed the presence of Pd-V defect pair only in highly doped n-type silicon. A dumbbell structure with substitutional palladium and silicon vacancy as nearest neigbor is suggested for this defect.

Original language	English
Pages (from-to)	299-303
Number of pages	5
Journal	Hyperfine Interactions
Volume	158
Issue number	1-4
DOIs	https://doi.org/10.1007/s10751-005-9048-9
Publication status	Published - Nov 2004

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title = "Local structure of implanted Pd in Si using PAC",

abstract = "TDPAC has been employed to study the local structure of implanted palladium in silicon utilizing 87-75 keV γ-γ cascade of probe nucleus 100Pd. The observed hyperfine parameters revealed the presence of Pd-V defect pair only in highly doped n-type silicon. A dumbbell structure with substitutional palladium and silicon vacancy as nearest neigbor is suggested for this defect.",

keywords = "Ion implantation, PAC, Transition metals in silicon",

author = "Brett, {D. A.} and R. Dogra and Byrne, {A. P.} and Ridgway, {M. C.} and J. Bartels and R. Vianden",

year = "2004",

month = nov,

doi = "10.1007/s10751-005-9048-9",

language = "English",

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journal = "Hyperfine Interactions",

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T1 - Local structure of implanted Pd in Si using PAC

AU - Brett, D. A.

AU - Dogra, R.

AU - Byrne, A. P.

AU - Ridgway, M. C.

AU - Bartels, J.

AU - Vianden, R.

PY - 2004/11

Y1 - 2004/11

N2 - TDPAC has been employed to study the local structure of implanted palladium in silicon utilizing 87-75 keV γ-γ cascade of probe nucleus 100Pd. The observed hyperfine parameters revealed the presence of Pd-V defect pair only in highly doped n-type silicon. A dumbbell structure with substitutional palladium and silicon vacancy as nearest neigbor is suggested for this defect.

AB - TDPAC has been employed to study the local structure of implanted palladium in silicon utilizing 87-75 keV γ-γ cascade of probe nucleus 100Pd. The observed hyperfine parameters revealed the presence of Pd-V defect pair only in highly doped n-type silicon. A dumbbell structure with substitutional palladium and silicon vacancy as nearest neigbor is suggested for this defect.

KW - Ion implantation

KW - PAC

KW - Transition metals in silicon

UR - http://www.scopus.com/inward/record.url?scp=32944475651&partnerID=8YFLogxK

U2 - 10.1007/s10751-005-9048-9

DO - 10.1007/s10751-005-9048-9

M3 - Article

SN - 0304-3843

VL - 158

SP - 299

EP - 303

JO - Hyperfine Interactions

JF - Hyperfine Interactions

IS - 1-4

ER -

Local structure of implanted Pd in Si using PAC

Abstract

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