Local structures of free-standing AlxGa1-xN thin films studied by extended x-ray absorption fine structure

Kin Man Yu; W. Shan; C. J. Glover; M. C. Ridgway; William S. Wong; W. Yang

doi:10.1063/1.125548

Local structures of free-standing Al_xGa_1-xN thin films studied by extended x-ray absorption fine structure

Kin Man Yu^*, W. Shan, C. J. Glover, M. C. Ridgway, William S. Wong, W. Yang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

Local structural information for the first two atomic shells surrounding Ga atoms in free standing Al_xGa_1-xN alloy films has been obtained by extended x-ray absorption fine structure spectroscopy. For an AlN mole fraction ranging from 0 to 0.6, we found that the first shell Ga-N bond length had only a weak composition dependence, roughly one quarter of that predicted by Vegard's Law. In the second shell, the Ga-Ga bond length was significantly longer than that of Ga-Al (Δ∼0.04-0.065 Å). A bond-type specific composition dependence was observed for the second shell cation-cation distances. While the composition dependence of the Ga-Ga bond length is ∼70% of that predicted by Vegard's Law, the Ga-Al bond length was essentially composition independent. These results suggested that local strain in Al_xGa_1-xN was also accommodated by lattice distortion in the Al cation sublattice.

Original language	English
Pages (from-to)	4097-4099
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	26
DOIs	https://doi.org/10.1063/1.125548
Publication status	Published - 1999

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title = "Local structures of free-standing AlxGa1-xN thin films studied by extended x-ray absorption fine structure",

abstract = "Local structural information for the first two atomic shells surrounding Ga atoms in free standing AlxGa1-xN alloy films has been obtained by extended x-ray absorption fine structure spectroscopy. For an AlN mole fraction ranging from 0 to 0.6, we found that the first shell Ga-N bond length had only a weak composition dependence, roughly one quarter of that predicted by Vegard's Law. In the second shell, the Ga-Ga bond length was significantly longer than that of Ga-Al (Δ∼0.04-0.065 {\AA}). A bond-type specific composition dependence was observed for the second shell cation-cation distances. While the composition dependence of the Ga-Ga bond length is ∼70% of that predicted by Vegard's Law, the Ga-Al bond length was essentially composition independent. These results suggested that local strain in AlxGa1-xN was also accommodated by lattice distortion in the Al cation sublattice.",

author = "Yu, {Kin Man} and W. Shan and Glover, {C. J.} and Ridgway, {M. C.} and Wong, {William S.} and W. Yang",

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T1 - Local structures of free-standing AlxGa1-xN thin films studied by extended x-ray absorption fine structure

AU - Yu, Kin Man

AU - Shan, W.

AU - Glover, C. J.

AU - Ridgway, M. C.

AU - Wong, William S.

AU - Yang, W.

PY - 1999

Y1 - 1999

N2 - Local structural information for the first two atomic shells surrounding Ga atoms in free standing AlxGa1-xN alloy films has been obtained by extended x-ray absorption fine structure spectroscopy. For an AlN mole fraction ranging from 0 to 0.6, we found that the first shell Ga-N bond length had only a weak composition dependence, roughly one quarter of that predicted by Vegard's Law. In the second shell, the Ga-Ga bond length was significantly longer than that of Ga-Al (Δ∼0.04-0.065 Å). A bond-type specific composition dependence was observed for the second shell cation-cation distances. While the composition dependence of the Ga-Ga bond length is ∼70% of that predicted by Vegard's Law, the Ga-Al bond length was essentially composition independent. These results suggested that local strain in AlxGa1-xN was also accommodated by lattice distortion in the Al cation sublattice.

AB - Local structural information for the first two atomic shells surrounding Ga atoms in free standing AlxGa1-xN alloy films has been obtained by extended x-ray absorption fine structure spectroscopy. For an AlN mole fraction ranging from 0 to 0.6, we found that the first shell Ga-N bond length had only a weak composition dependence, roughly one quarter of that predicted by Vegard's Law. In the second shell, the Ga-Ga bond length was significantly longer than that of Ga-Al (Δ∼0.04-0.065 Å). A bond-type specific composition dependence was observed for the second shell cation-cation distances. While the composition dependence of the Ga-Ga bond length is ∼70% of that predicted by Vegard's Law, the Ga-Al bond length was essentially composition independent. These results suggested that local strain in AlxGa1-xN was also accommodated by lattice distortion in the Al cation sublattice.

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Local structures of free-standing Al_xGa_1-xN thin films studied by extended x-ray absorption fine structure

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