Local structures of Ga atoms in amorphous silicon and hydrogenated amorphous silicon before and after synchrotron x-ray irradiation

Kin Man Yu; W. Walukiewicz; S. Muto; H. C. Jin; J. R. Abelson; C. Clerc; C. J. Glover; M. C. Ridgway

doi:10.1063/1.125325

Local structures of Ga atoms in amorphous silicon and hydrogenated amorphous silicon before and after synchrotron x-ray irradiation

Kin Man Yu^*, W. Walukiewicz, S. Muto, H. C. Jin, J. R. Abelson, C. Clerc, C. J. Glover, M. C. Ridgway

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The influence of intense x-ray irradiation on the local bonding structure of Ga dopants in both hydrogen-free (a-Si) and hydrogenated (a-Si:H) amorphous Si thin films has been studied. Prior to x-ray exposure, extended x-ray absorption fine structure measurements revealed that H reduced the static disorder around the Ga atoms in amorphous Si. Thereafter, x-ray irradiation modified the local structure in the a-Si and a-Si:H samples. The Ga coordination number increased from <3.5 to ~3.80 atoms for both types of amorphous material as consistent with a greater fraction of electrically active, tetrahedrally coordinated dopant atoms. Also, greater structural disorder was observed around Ga atoms after x-ray irradiation suggesting that tetrahedrally coordinated Ga atoms were less well ordered than in threefold-coordinated sites.

Original language	English
Pages (from-to)	3282-3284
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	21
DOIs	https://doi.org/10.1063/1.125325
Publication status	Published - 22 Nov 1999

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title = "Local structures of Ga atoms in amorphous silicon and hydrogenated amorphous silicon before and after synchrotron x-ray irradiation",

abstract = "The influence of intense x-ray irradiation on the local bonding structure of Ga dopants in both hydrogen-free (a-Si) and hydrogenated (a-Si:H) amorphous Si thin films has been studied. Prior to x-ray exposure, extended x-ray absorption fine structure measurements revealed that H reduced the static disorder around the Ga atoms in amorphous Si. Thereafter, x-ray irradiation modified the local structure in the a-Si and a-Si:H samples. The Ga coordination number increased from <3.5 to ~3.80 atoms for both types of amorphous material as consistent with a greater fraction of electrically active, tetrahedrally coordinated dopant atoms. Also, greater structural disorder was observed around Ga atoms after x-ray irradiation suggesting that tetrahedrally coordinated Ga atoms were less well ordered than in threefold-coordinated sites.",

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T1 - Local structures of Ga atoms in amorphous silicon and hydrogenated amorphous silicon before and after synchrotron x-ray irradiation

AU - Yu, Kin Man

AU - Walukiewicz, W.

AU - Muto, S.

AU - Jin, H. C.

AU - Abelson, J. R.

AU - Clerc, C.

AU - Glover, C. J.

AU - Ridgway, M. C.

PY - 1999/11/22

Y1 - 1999/11/22

N2 - The influence of intense x-ray irradiation on the local bonding structure of Ga dopants in both hydrogen-free (a-Si) and hydrogenated (a-Si:H) amorphous Si thin films has been studied. Prior to x-ray exposure, extended x-ray absorption fine structure measurements revealed that H reduced the static disorder around the Ga atoms in amorphous Si. Thereafter, x-ray irradiation modified the local structure in the a-Si and a-Si:H samples. The Ga coordination number increased from <3.5 to ~3.80 atoms for both types of amorphous material as consistent with a greater fraction of electrically active, tetrahedrally coordinated dopant atoms. Also, greater structural disorder was observed around Ga atoms after x-ray irradiation suggesting that tetrahedrally coordinated Ga atoms were less well ordered than in threefold-coordinated sites.

AB - The influence of intense x-ray irradiation on the local bonding structure of Ga dopants in both hydrogen-free (a-Si) and hydrogenated (a-Si:H) amorphous Si thin films has been studied. Prior to x-ray exposure, extended x-ray absorption fine structure measurements revealed that H reduced the static disorder around the Ga atoms in amorphous Si. Thereafter, x-ray irradiation modified the local structure in the a-Si and a-Si:H samples. The Ga coordination number increased from <3.5 to ~3.80 atoms for both types of amorphous material as consistent with a greater fraction of electrically active, tetrahedrally coordinated dopant atoms. Also, greater structural disorder was observed around Ga atoms after x-ray irradiation suggesting that tetrahedrally coordinated Ga atoms were less well ordered than in threefold-coordinated sites.

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U2 - 10.1063/1.125325

DO - 10.1063/1.125325

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Local structures of Ga atoms in amorphous silicon and hydrogenated amorphous silicon before and after synchrotron x-ray irradiation

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