Abstract
We demonstrate a method to locally change the refractive index in planar optical devices by photodarkening of a thin chalcogenide glass layer deposited on top of the device. The method is used to tune the resonance of GaAs-based photonic crystal cavities by up to 3 nm at 940 nm. The method has broad applications for postproduction tuning of photonic devices.
Original language | English |
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Article number | 043123 |
Journal | Applied Physics Letters |
Volume | 92 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2008 |