Low Energy Ion Implantation and Annealing of Au/Ni/Ti Contacts to n-SiC

Neelu Shrestha; Martyn H. Kibel; Patrick W. Leech; Anthony S. Holland; Geoffrey K. Reeves; Mark C. Ridgway; Phillip Tanner

doi:10.1557/adv.2017.314

Low Energy Ion Implantation and Annealing of Au/Ni/Ti Contacts to n-SiC

Neelu Shrestha
, Martyn H. Kibel
, Patrick W. Leech
, Anthony S. Holland
, Geoffrey K. Reeves
, Mark C. Ridgway
, Phillip Tanner

Research output: Contribution to journal › Article › peer-review

Abstract

The electrical characteristics of Au/Ni/Ti/ n-SiC contacts have been examined as a function of implant dose (10¹³-10¹⁴ ions/cm²) at 5 KeV and temperature of annealing (750-1000 °C). Measurements of specific contact resistance, ρc, were approximately constant at lower implant doses until increasing at 1 x 10¹⁵ ions/cm² for both C and P ions. Annealing at a temperature of 1000 °C has reduced the value of ρc by an order of magnitude to ∼1 x 10^-6 Ω.cm² at implant doses of 10¹³-10¹⁴ ions/cm². Auger Electron Spectroscopy (AES) has shown that annealing at 1000 °C resulted in a strong indiffusion of the metallization layers at the interface.

Original language	English
Pages (from-to)	2903-2908
Number of pages	6
Journal	MRS Advances
Volume	2
Issue number	51
DOIs	https://doi.org/10.1557/adv.2017.314
Publication status	Published - 2017

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10.1557/adv.2017.314

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title = "Low Energy Ion Implantation and Annealing of Au/Ni/Ti Contacts to n-SiC",

abstract = "The electrical characteristics of Au/Ni/Ti/ n-SiC contacts have been examined as a function of implant dose (1013-1014 ions/cm2) at 5 KeV and temperature of annealing (750-1000 °C). Measurements of specific contact resistance, ρc, were approximately constant at lower implant doses until increasing at 1 x 1015 ions/cm2 for both C and P ions. Annealing at a temperature of 1000 °C has reduced the value of ρc by an order of magnitude to ∼1 x 10-6 Ω.cm2 at implant doses of 1013-1014 ions/cm2. Auger Electron Spectroscopy (AES) has shown that annealing at 1000 °C resulted in a strong indiffusion of the metallization layers at the interface.",

keywords = "annealing, electrical properties, ion-implantation",

author = "Neelu Shrestha and Kibel, \{Martyn H.\} and Leech, \{Patrick W.\} and Holland, \{Anthony S.\} and Reeves, \{Geoffrey K.\} and Ridgway, \{Mark C.\} and Phillip Tanner",

note = "Publisher Copyright: Copyright {\textcopyright} Materials Research Society 2017.",

year = "2017",

doi = "10.1557/adv.2017.314",

language = "English",

volume = "2",

pages = "2903--2908",

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TY - JOUR

T1 - Low Energy Ion Implantation and Annealing of Au/Ni/Ti Contacts to n-SiC

AU - Shrestha, Neelu

AU - Kibel, Martyn H.

AU - Leech, Patrick W.

AU - Holland, Anthony S.

AU - Reeves, Geoffrey K.

AU - Ridgway, Mark C.

AU - Tanner, Phillip

PY - 2017

Y1 - 2017

N2 - The electrical characteristics of Au/Ni/Ti/ n-SiC contacts have been examined as a function of implant dose (1013-1014 ions/cm2) at 5 KeV and temperature of annealing (750-1000 °C). Measurements of specific contact resistance, ρc, were approximately constant at lower implant doses until increasing at 1 x 1015 ions/cm2 for both C and P ions. Annealing at a temperature of 1000 °C has reduced the value of ρc by an order of magnitude to ∼1 x 10-6 Ω.cm2 at implant doses of 1013-1014 ions/cm2. Auger Electron Spectroscopy (AES) has shown that annealing at 1000 °C resulted in a strong indiffusion of the metallization layers at the interface.

AB - The electrical characteristics of Au/Ni/Ti/ n-SiC contacts have been examined as a function of implant dose (1013-1014 ions/cm2) at 5 KeV and temperature of annealing (750-1000 °C). Measurements of specific contact resistance, ρc, were approximately constant at lower implant doses until increasing at 1 x 1015 ions/cm2 for both C and P ions. Annealing at a temperature of 1000 °C has reduced the value of ρc by an order of magnitude to ∼1 x 10-6 Ω.cm2 at implant doses of 1013-1014 ions/cm2. Auger Electron Spectroscopy (AES) has shown that annealing at 1000 °C resulted in a strong indiffusion of the metallization layers at the interface.

KW - annealing

KW - electrical properties

KW - ion-implantation

UR - https://www.scopus.com/pages/publications/85047077026

U2 - 10.1557/adv.2017.314

DO - 10.1557/adv.2017.314

M3 - Article

VL - 2

SP - 2903

EP - 2908

JO - MRS Advances

JF - MRS Advances

IS - 51

ER -

Low Energy Ion Implantation and Annealing of Au/Ni/Ti Contacts to n-SiC

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