Low energy O2+ and N2+ beam-induced profile broadening effects in Si

Prakash Deenapanray; Mladen Petravic

doi:10.1116/1.1354602

Low energy O₂⁺ and N₂⁺ beam-induced profile broadening effects in Si

Prakash Deenapanray, Mladen Petravic

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The angular dependence of the profile broadening of Na, Li, and F during secondary ion mass
spectrometry depth profiling was investigated in either n- or p-type Si using 10 keV O2
1 or N2 1 bombardment. The electric field-induced segregation of Na and Li at the SiO2/Si interface increased exponentially for O2 1 bombardment below ;27°, whereas a N2 1 beam provided better depth
resolution. The N2 1 beam-induced profile broadening of Li was higher in the low resistivity n-type
Si than in the high resistivity p-type Si for bombardment conditions producing a nitride layer at the surface. This behavior was characteristic of the field-induced segregation of Li at the SiNy/Si
interface. Profiling below the critical angle for oxide formation resulted in the antisegregation of F
into the SiO2 layer and gave sharper profiles. The decay length of F decreased exponentially with
the surface charging of the SiO2 layer. By contrast, broader profiles were obtained under N2
1 bombardment for the same impact angles. © 2001 American Vacuum Society.

Original language	English
Pages (from-to)	893-898
Number of pages	6
Journal	Journal of Vacuum Science and Technology A
Volume	19
Issue number	3
DOIs	https://doi.org/10.1116/1.1354602
Publication status	Published - 2001

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title = "Low energy O2+ and N2+ beam-induced profile broadening effects in Si",

abstract = "The angular dependence of the profile broadening of Na, Li, and F during secondary ion massspectrometry depth profiling was investigated in either n- or p-type Si using 10 keV O21 or N2 1 bombardment. The electric field-induced segregation of Na and Li at the SiO2/Si interface increased exponentially for O2 1 bombardment below ;27°, whereas a N2 1 beam provided better depthresolution. The N2 1 beam-induced profile broadening of Li was higher in the low resistivity n-typeSi than in the high resistivity p-type Si for bombardment conditions producing a nitride layer at the surface. This behavior was characteristic of the field-induced segregation of Li at the SiNy/Siinterface. Profiling below the critical angle for oxide formation resulted in the antisegregation of Finto the SiO2 layer and gave sharper profiles. The decay length of F decreased exponentially withthe surface charging of the SiO2 layer. By contrast, broader profiles were obtained under N21 bombardment for the same impact angles. {\textcopyright} 2001 American Vacuum Society.",

author = "Prakash Deenapanray and Mladen Petravic",

year = "2001",

doi = "10.1116/1.1354602",

language = "English",

volume = "19",

pages = "893--898",

journal = "Journal of Vacuum Science and Technology A",

publisher = "American Institute of Physics (AIP)",

number = "3",

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TY - JOUR

T1 - Low energy O2+ and N2+ beam-induced profile broadening effects in Si

AU - Deenapanray, Prakash

AU - Petravic, Mladen

PY - 2001

Y1 - 2001

N2 - The angular dependence of the profile broadening of Na, Li, and F during secondary ion massspectrometry depth profiling was investigated in either n- or p-type Si using 10 keV O21 or N2 1 bombardment. The electric field-induced segregation of Na and Li at the SiO2/Si interface increased exponentially for O2 1 bombardment below ;27°, whereas a N2 1 beam provided better depthresolution. The N2 1 beam-induced profile broadening of Li was higher in the low resistivity n-typeSi than in the high resistivity p-type Si for bombardment conditions producing a nitride layer at the surface. This behavior was characteristic of the field-induced segregation of Li at the SiNy/Siinterface. Profiling below the critical angle for oxide formation resulted in the antisegregation of Finto the SiO2 layer and gave sharper profiles. The decay length of F decreased exponentially withthe surface charging of the SiO2 layer. By contrast, broader profiles were obtained under N21 bombardment for the same impact angles. © 2001 American Vacuum Society.

AB - The angular dependence of the profile broadening of Na, Li, and F during secondary ion massspectrometry depth profiling was investigated in either n- or p-type Si using 10 keV O21 or N2 1 bombardment. The electric field-induced segregation of Na and Li at the SiO2/Si interface increased exponentially for O2 1 bombardment below ;27°, whereas a N2 1 beam provided better depthresolution. The N2 1 beam-induced profile broadening of Li was higher in the low resistivity n-typeSi than in the high resistivity p-type Si for bombardment conditions producing a nitride layer at the surface. This behavior was characteristic of the field-induced segregation of Li at the SiNy/Siinterface. Profiling below the critical angle for oxide formation resulted in the antisegregation of Finto the SiO2 layer and gave sharper profiles. The decay length of F decreased exponentially withthe surface charging of the SiO2 layer. By contrast, broader profiles were obtained under N21 bombardment for the same impact angles. © 2001 American Vacuum Society.

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U2 - 10.1116/1.1354602

DO - 10.1116/1.1354602

M3 - Article

VL - 19

SP - 893

EP - 898

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

IS - 3

ER -

Low energy O₂⁺ and N₂⁺ beam-induced profile broadening effects in Si

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