Low ensemble disorder in quantum well tube nanowires

Christopher L. Davies; Patrick Parkinson; Nian Jiang; Jessica L. Boland; Sonia Conesa-Boj; H. Hoe Tan; Chennupati Jagadish; Laura M. Herz; Michael B. Johnston

doi:10.1039/c5nr06996c

Low ensemble disorder in quantum well tube nanowires

Christopher L. Davies, Patrick Parkinson, Nian Jiang, Jessica L. Boland, Sonia Conesa-Boj, H. Hoe Tan, Chennupati Jagadish, Laura M. Herz, Michael B. Johnston^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

We have observed very low disorder in high quality quantum well tubes (QWT) in GaAs-Al_0.4Ga_0.6As core-multishell nanowires. Room-temperature photoluminescence spectra were measured from 150 single nanowires enabling a full statistical analysis of both intra- and inter-nanowire disorder. By modelling individual nanowire spectra, we assigned a quantum well tube thickness, a core disorder parameter and a QWT disorder parameter to each nanowire. A strong correlation was observed between disorder in the GaAs cores and disorder in the GaAs QWTs, which indicates that variations in core morphology effectively propagate to the shell layers. This highlights the importance of high quality core growth prior to shell deposition. Furthermore, variations in QWT thicknesses for different facet directions was found to be a likely cause of intra-wire disorder, highlighting the need for accurate shell growth.

Original language	English
Pages (from-to)	20531-20538
Number of pages	8
Journal	Nanoscale
Volume	7
Issue number	48
DOIs	https://doi.org/10.1039/c5nr06996c
Publication status	Published - 28 Dec 2015

Access to Document

10.1039/c5nr06996c

Cite this

@article{e0a8cbc4e5374b8b8d22b21568313595,

title = "Low ensemble disorder in quantum well tube nanowires",

abstract = "We have observed very low disorder in high quality quantum well tubes (QWT) in GaAs-Al0.4Ga0.6As core-multishell nanowires. Room-temperature photoluminescence spectra were measured from 150 single nanowires enabling a full statistical analysis of both intra- and inter-nanowire disorder. By modelling individual nanowire spectra, we assigned a quantum well tube thickness, a core disorder parameter and a QWT disorder parameter to each nanowire. A strong correlation was observed between disorder in the GaAs cores and disorder in the GaAs QWTs, which indicates that variations in core morphology effectively propagate to the shell layers. This highlights the importance of high quality core growth prior to shell deposition. Furthermore, variations in QWT thicknesses for different facet directions was found to be a likely cause of intra-wire disorder, highlighting the need for accurate shell growth.",

author = "Davies, {Christopher L.} and Patrick Parkinson and Nian Jiang and Boland, {Jessica L.} and Sonia Conesa-Boj and {Hoe Tan}, H. and Chennupati Jagadish and Herz, {Laura M.} and Johnston, {Michael B.}",

note = "Publisher Copyright: {\textcopyright} 2015 The Royal Society of Chemistry.",

year = "2015",

month = dec,

day = "28",

doi = "10.1039/c5nr06996c",

language = "English",

volume = "7",

pages = "20531--20538",

journal = "Nanoscale",

issn = "2040-3364",

publisher = "Royal Society of Chemistry",

number = "48",

}

TY - JOUR

T1 - Low ensemble disorder in quantum well tube nanowires

AU - Davies, Christopher L.

AU - Parkinson, Patrick

AU - Jiang, Nian

AU - Boland, Jessica L.

AU - Conesa-Boj, Sonia

AU - Hoe Tan, H.

AU - Jagadish, Chennupati

AU - Herz, Laura M.

AU - Johnston, Michael B.

PY - 2015/12/28

Y1 - 2015/12/28

N2 - We have observed very low disorder in high quality quantum well tubes (QWT) in GaAs-Al0.4Ga0.6As core-multishell nanowires. Room-temperature photoluminescence spectra were measured from 150 single nanowires enabling a full statistical analysis of both intra- and inter-nanowire disorder. By modelling individual nanowire spectra, we assigned a quantum well tube thickness, a core disorder parameter and a QWT disorder parameter to each nanowire. A strong correlation was observed between disorder in the GaAs cores and disorder in the GaAs QWTs, which indicates that variations in core morphology effectively propagate to the shell layers. This highlights the importance of high quality core growth prior to shell deposition. Furthermore, variations in QWT thicknesses for different facet directions was found to be a likely cause of intra-wire disorder, highlighting the need for accurate shell growth.

AB - We have observed very low disorder in high quality quantum well tubes (QWT) in GaAs-Al0.4Ga0.6As core-multishell nanowires. Room-temperature photoluminescence spectra were measured from 150 single nanowires enabling a full statistical analysis of both intra- and inter-nanowire disorder. By modelling individual nanowire spectra, we assigned a quantum well tube thickness, a core disorder parameter and a QWT disorder parameter to each nanowire. A strong correlation was observed between disorder in the GaAs cores and disorder in the GaAs QWTs, which indicates that variations in core morphology effectively propagate to the shell layers. This highlights the importance of high quality core growth prior to shell deposition. Furthermore, variations in QWT thicknesses for different facet directions was found to be a likely cause of intra-wire disorder, highlighting the need for accurate shell growth.

UR - http://www.scopus.com/inward/record.url?scp=84949033893&partnerID=8YFLogxK

U2 - 10.1039/c5nr06996c

DO - 10.1039/c5nr06996c

M3 - Article

SN - 2040-3364

VL - 7

SP - 20531

EP - 20538

JO - Nanoscale

JF - Nanoscale

IS - 48

ER -

Low ensemble disorder in quantum well tube nanowires

Abstract

Access to Document

Other files and links

Fingerprint

Cite this