Abstract
We have successfully fabricated a dispersion engineered ZnSe waveguide. The ZnSe film was deposited on a CaF2 substrate by radio frequency magnetron sputtering, and the waveguide was patterned directly on the ZnSe films by UV lithography and inductively coupled plasma etching. The nonlinear coefficient in the 4-μm-width waveguide was calculated to be 0.73 w−1 m−1 for both TE and TM modes at 1.55 µm. The loss of the ZnSe rib waveguides was measured to be 4.3 dB/cm at 1550 nm using the cut-back method.
| Original language | English |
|---|---|
| Article number | 065303 |
| Journal | AIP Advances |
| Volume | 11 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 1 Jun 2021 |
Fingerprint
Dive into the research topics of 'Low loss and dispersion engineered ZnSe waveguides at telecom wavelengths'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver