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Low loss and dispersion engineered ZnSe waveguides at telecom wavelengths

  • Yiming Fang*
  • , Zhen Yang
  • , Chengdong Li
  • , Peipeng Xu
  • , Kunlun Yan
  • , Yan Sheng
  • , Haizheng Tao
  • , Rongping Wang*
  • *Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    2 Citations (Scopus)

    Abstract

    We have successfully fabricated a dispersion engineered ZnSe waveguide. The ZnSe film was deposited on a CaF2 substrate by radio frequency magnetron sputtering, and the waveguide was patterned directly on the ZnSe films by UV lithography and inductively coupled plasma etching. The nonlinear coefficient in the 4-μm-width waveguide was calculated to be 0.73 w−1 m−1 for both TE and TM modes at 1.55 µm. The loss of the ZnSe rib waveguides was measured to be 4.3 dB/cm at 1550 nm using the cut-back method.

    Original languageEnglish
    Article number065303
    JournalAIP Advances
    Volume11
    Issue number6
    DOIs
    Publication statusPublished - 1 Jun 2021

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