Low loss, thin p-clad 980-nm InGaAs semiconductor laser diodes with an asymmetric structure design

M. Buda; J. Hay; H. H. Tan; J. Wong-Leung; Chennupati Jagadish

doi:10.1109/JQE.2003.810270

Low loss, thin p-clad 980-nm InGaAs semiconductor laser diodes with an asymmetric structure design

M. Buda^*, J. Hay, H. H. Tan, J. Wong-Leung, Chennupati Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

Thin p-clad InGaAs ridge waveguide quantum-well lasers having an asymmetric structure design were fabricated. The internal absorption coefficient is as low as 2.5 cm^-1, due to the restricted field extension in the 0.3-μm-thick p-type top AlGaAs cladding layer. Ti-Pt-Au metallization is used outside the ridge to provide adherence on the oxide while Au directly contacts the ridge region. It is shown that the most likely source of loss in these thin p-clad devices is scattering at the rough interface between Au and the p⁺⁺ top GaAs layer, after ohmic contact heat treatment.

Original language	English
Pages (from-to)	625-633
Number of pages	9
Journal	IEEE Journal of Quantum Electronics
Volume	39
Issue number	5
DOIs	https://doi.org/10.1109/JQE.2003.810270
Publication status	Published - May 2003

Access to Document

10.1109/JQE.2003.810270

Cite this

@article{52f923061ee6417caa8ebe5ab62570ea,

title = "Low loss, thin p-clad 980-nm InGaAs semiconductor laser diodes with an asymmetric structure design",

abstract = "Thin p-clad InGaAs ridge waveguide quantum-well lasers having an asymmetric structure design were fabricated. The internal absorption coefficient is as low as 2.5 cm-1, due to the restricted field extension in the 0.3-μm-thick p-type top AlGaAs cladding layer. Ti-Pt-Au metallization is used outside the ridge to provide adherence on the oxide while Au directly contacts the ridge region. It is shown that the most likely source of loss in these thin p-clad devices is scattering at the rough interface between Au and the p++ top GaAs layer, after ohmic contact heat treatment.",

keywords = "Asymmetric structure, Quantum-well lasers, Semiconductor lasers, Thin p-clad",

author = "M. Buda and J. Hay and Tan, {H. H.} and J. Wong-Leung and Chennupati Jagadish",

year = "2003",

month = may,

doi = "10.1109/JQE.2003.810270",

language = "English",

volume = "39",

pages = "625--633",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - Low loss, thin p-clad 980-nm InGaAs semiconductor laser diodes with an asymmetric structure design

AU - Buda, M.

AU - Hay, J.

AU - Tan, H. H.

AU - Wong-Leung, J.

AU - Jagadish, Chennupati

PY - 2003/5

Y1 - 2003/5

N2 - Thin p-clad InGaAs ridge waveguide quantum-well lasers having an asymmetric structure design were fabricated. The internal absorption coefficient is as low as 2.5 cm-1, due to the restricted field extension in the 0.3-μm-thick p-type top AlGaAs cladding layer. Ti-Pt-Au metallization is used outside the ridge to provide adherence on the oxide while Au directly contacts the ridge region. It is shown that the most likely source of loss in these thin p-clad devices is scattering at the rough interface between Au and the p++ top GaAs layer, after ohmic contact heat treatment.

AB - Thin p-clad InGaAs ridge waveguide quantum-well lasers having an asymmetric structure design were fabricated. The internal absorption coefficient is as low as 2.5 cm-1, due to the restricted field extension in the 0.3-μm-thick p-type top AlGaAs cladding layer. Ti-Pt-Au metallization is used outside the ridge to provide adherence on the oxide while Au directly contacts the ridge region. It is shown that the most likely source of loss in these thin p-clad devices is scattering at the rough interface between Au and the p++ top GaAs layer, after ohmic contact heat treatment.

KW - Asymmetric structure

KW - Quantum-well lasers

KW - Semiconductor lasers

KW - Thin p-clad

UR - http://www.scopus.com/inward/record.url?scp=0037514595&partnerID=8YFLogxK

U2 - 10.1109/JQE.2003.810270

DO - 10.1109/JQE.2003.810270

M3 - Article

SN - 0018-9197

VL - 39

SP - 625

EP - 633

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 5

ER -

Low loss, thin p-clad 980-nm InGaAs semiconductor laser diodes with an asymmetric structure design

Abstract

Access to Document

Other files and links

Fingerprint

Cite this