Low loss, thin p-clad 980-nm InGaAs semiconductor laser diodes with an asymmetric structure design

Engineering

• Indium Gallium Arsenide 100%
• Waveguide 50%
• Quantum Well 50%
• Ohmic Contacts 50%
• Heat Treatment 50%
• Aluminium Gallium Arsenide 50%
• Absorption Coefficient 50%
• Metallizations 50%
• Gaas Layer 50%
• Cladding Layer 50%
• Internal Absorption 50%

Material Science

• Semiconductor Laser 100%
• Laser Diode 100%
• Indium Gallium Arsenide 100%
• Oxide Compound 50%
• Waveguide 50%
• Quantum Well 50%
• Gallium Arsenide 50%
• Heat Treatment 50%
• Aluminium Gallium Arsenide 50%

Earth and Planetary Sciences

• Semiconductor Laser 100%
• Waveguide 50%
• Aluminum Gallium Arsenide 50%
• Cladding 50%
• Quantum Well Lasers 50%
• Heat Treatment 50%