Low resistance Ohmic contact to p-type crystalline silicon via nitrogen-doped copper oxide films

Xinyu Zhang; Yimao Wan; James Bullock; Thomas Allen; Andres Cuevas

doi:10.1063/1.4960529

Low resistance Ohmic contact to p-type crystalline silicon via nitrogen-doped copper oxide films

Xinyu Zhang^*, Yimao Wan, James Bullock, Thomas Allen, Andres Cuevas

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

This work explores the application of transparent nitrogen doped copper oxide (CuO_x:N) films deposited by reactive sputtering to create hole-selective contacts for p-type crystalline silicon (c-Si) solar cells. It is found that CuO_x:N sputtered directly onto crystalline silicon is able to form an Ohmic contact. X-ray photoelectron spectroscopy and Raman spectroscopy measurements are used to characterise the structural and physical properties of the CuO_x:N films. Both the oxygen flow rate and the substrate temperature during deposition have a significant impact on the film composition, as well as on the resulting contact resistivity. After optimization, a low contact resistivity of ∼10 mΩ cm² has been established. This result offers significant advantages over conventional contact structures in terms of carrier transport and device fabrication.

Original language	English
Article number	052102
Journal	Applied Physics Letters
Volume	109
Issue number	5
DOIs	https://doi.org/10.1063/1.4960529
Publication status	Published - 1 Aug 2016

Access to Document

10.1063/1.4960529

Cite this

@article{762c847708dc4faba134f9a72a2b9692,

title = "Low resistance Ohmic contact to p-type crystalline silicon via nitrogen-doped copper oxide films",

abstract = "This work explores the application of transparent nitrogen doped copper oxide (CuOx:N) films deposited by reactive sputtering to create hole-selective contacts for p-type crystalline silicon (c-Si) solar cells. It is found that CuOx:N sputtered directly onto crystalline silicon is able to form an Ohmic contact. X-ray photoelectron spectroscopy and Raman spectroscopy measurements are used to characterise the structural and physical properties of the CuOx:N films. Both the oxygen flow rate and the substrate temperature during deposition have a significant impact on the film composition, as well as on the resulting contact resistivity. After optimization, a low contact resistivity of ∼10 mΩ cm2 has been established. This result offers significant advantages over conventional contact structures in terms of carrier transport and device fabrication.",

author = "Xinyu Zhang and Yimao Wan and James Bullock and Thomas Allen and Andres Cuevas",

note = "Publisher Copyright: {\textcopyright} 2016 Author(s).",

year = "2016",

month = aug,

day = "1",

doi = "10.1063/1.4960529",

language = "English",

volume = "109",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "5",

}

TY - JOUR

T1 - Low resistance Ohmic contact to p-type crystalline silicon via nitrogen-doped copper oxide films

AU - Zhang, Xinyu

AU - Wan, Yimao

AU - Bullock, James

AU - Allen, Thomas

AU - Cuevas, Andres

PY - 2016/8/1

Y1 - 2016/8/1

N2 - This work explores the application of transparent nitrogen doped copper oxide (CuOx:N) films deposited by reactive sputtering to create hole-selective contacts for p-type crystalline silicon (c-Si) solar cells. It is found that CuOx:N sputtered directly onto crystalline silicon is able to form an Ohmic contact. X-ray photoelectron spectroscopy and Raman spectroscopy measurements are used to characterise the structural and physical properties of the CuOx:N films. Both the oxygen flow rate and the substrate temperature during deposition have a significant impact on the film composition, as well as on the resulting contact resistivity. After optimization, a low contact resistivity of ∼10 mΩ cm2 has been established. This result offers significant advantages over conventional contact structures in terms of carrier transport and device fabrication.

AB - This work explores the application of transparent nitrogen doped copper oxide (CuOx:N) films deposited by reactive sputtering to create hole-selective contacts for p-type crystalline silicon (c-Si) solar cells. It is found that CuOx:N sputtered directly onto crystalline silicon is able to form an Ohmic contact. X-ray photoelectron spectroscopy and Raman spectroscopy measurements are used to characterise the structural and physical properties of the CuOx:N films. Both the oxygen flow rate and the substrate temperature during deposition have a significant impact on the film composition, as well as on the resulting contact resistivity. After optimization, a low contact resistivity of ∼10 mΩ cm2 has been established. This result offers significant advantages over conventional contact structures in terms of carrier transport and device fabrication.

UR - http://www.scopus.com/inward/record.url?scp=84981206946&partnerID=8YFLogxK

U2 - 10.1063/1.4960529

DO - 10.1063/1.4960529

M3 - Article

SN - 0003-6951

VL - 109

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 052102

ER -

Low resistance Ohmic contact to p-type crystalline silicon via nitrogen-doped copper oxide films

Abstract

Access to Document

Other files and links

Fingerprint

Cite this