Low resistance TiO2-passivated calcium contacts to for crystalline silicon solar cells

Thomas G. Allen; Peiting Zheng; Ben Vaughan; Matthew Barr; Yimao Wan; Christian Samundsett; James Bullock; Andres Cuevas

doi:10.1109/PVSC.2016.7749584

Low resistance TiO₂-passivated calcium contacts to for crystalline silicon solar cells

Thomas G. Allen, Peiting Zheng, Ben Vaughan, Matthew Barr, Yimao Wan, Christian Samundsett, James Bullock, Andres Cuevas

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Citations (Scopus)

Abstract

It has recently been shown that low resistance Ohmic contact to lightly doped n-type crystalline silicon (c-Si) is possible by direct metallization via a thin layer of the low work function metal calcium ( ∼2.9 eV) and an overlying aluminium capping layer. Using this approach upper limit contact resistivities of < 2 mΩcm² can be realised on undiffused n-type surfaces. However, recombination at the Ca / Si interface limits the application of the Ca contact to very low contact fractions which leads to non-negligible resistive losses and an increase in device fabrication complexity. Here we show that the low resistance Ohmic contact of the Ca / Al structure is retained after the addition of a TiO2 interlayer, leading the way to the development of a passivated contact device utilizing TiO₂ and Ca.

Original language	English
Title of host publication	2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	230-233
Number of pages	4
ISBN (Electronic)	9781509027248
DOIs	https://doi.org/10.1109/PVSC.2016.7749584
Publication status	Published - 18 Nov 2016
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: 5 Jun 2016 → 10 Jun 2016

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
Volume	2016-November
ISSN (Print)	0160-8371

Conference

Conference	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/Territory	United States
City	Portland
Period	5/06/16 → 10/06/16

Access to Document

10.1109/PVSC.2016.7749584

Cite this

Allen, T. G., Zheng, P., Vaughan, B., Barr, M., Wan, Y., Samundsett, C., Bullock, J., & Cuevas, A. (2016). Low resistance TiO₂-passivated calcium contacts to for crystalline silicon solar cells. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (pp. 230-233). Article 7749584 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7749584

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abstract = "It has recently been shown that low resistance Ohmic contact to lightly doped n-type crystalline silicon (c-Si) is possible by direct metallization via a thin layer of the low work function metal calcium ( ∼2.9 eV) and an overlying aluminium capping layer. Using this approach upper limit contact resistivities of < 2 mΩcm2 can be realised on undiffused n-type surfaces. However, recombination at the Ca / Si interface limits the application of the Ca contact to very low contact fractions which leads to non-negligible resistive losses and an increase in device fabrication complexity. Here we show that the low resistance Ohmic contact of the Ca / Al structure is retained after the addition of a TiO2 interlayer, leading the way to the development of a passivated contact device utilizing TiO2 and Ca.",

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Allen, TG, Zheng, P, Vaughan, B, Barr, M, Wan, Y, Samundsett, C, Bullock, J & Cuevas, A 2016, Low resistance TiO₂-passivated calcium contacts to for crystalline silicon solar cells. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016., 7749584, Conference Record of the IEEE Photovoltaic Specialists Conference, vol. 2016-November, Institute of Electrical and Electronics Engineers Inc., pp. 230-233, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 5/06/16. https://doi.org/10.1109/PVSC.2016.7749584

Low resistance TiO₂-passivated calcium contacts to for crystalline silicon solar cells. / Allen, Thomas G.; Zheng, Peiting; Vaughan, Ben et al.
2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 230-233 7749584 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - It has recently been shown that low resistance Ohmic contact to lightly doped n-type crystalline silicon (c-Si) is possible by direct metallization via a thin layer of the low work function metal calcium ( ∼2.9 eV) and an overlying aluminium capping layer. Using this approach upper limit contact resistivities of < 2 mΩcm2 can be realised on undiffused n-type surfaces. However, recombination at the Ca / Si interface limits the application of the Ca contact to very low contact fractions which leads to non-negligible resistive losses and an increase in device fabrication complexity. Here we show that the low resistance Ohmic contact of the Ca / Al structure is retained after the addition of a TiO2 interlayer, leading the way to the development of a passivated contact device utilizing TiO2 and Ca.

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Allen TG, Zheng P, Vaughan B, Barr M, Wan Y, Samundsett C et al. Low resistance TiO₂-passivated calcium contacts to for crystalline silicon solar cells. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 230-233. 7749584. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2016.7749584