@inproceedings{a49aff4cf3c14742bacd437ba46cfd13,
title = "Low resistance TiO2-passivated calcium contacts to for crystalline silicon solar cells",
abstract = "It has recently been shown that low resistance Ohmic contact to lightly doped n-type crystalline silicon (c-Si) is possible by direct metallization via a thin layer of the low work function metal calcium ( ∼2.9 eV) and an overlying aluminium capping layer. Using this approach upper limit contact resistivities of < 2 mΩcm2 can be realised on undiffused n-type surfaces. However, recombination at the Ca / Si interface limits the application of the Ca contact to very low contact fractions which leads to non-negligible resistive losses and an increase in device fabrication complexity. Here we show that the low resistance Ohmic contact of the Ca / Al structure is retained after the addition of a TiO2 interlayer, leading the way to the development of a passivated contact device utilizing TiO2 and Ca.",
author = "Allen, \{Thomas G.\} and Peiting Zheng and Ben Vaughan and Matthew Barr and Yimao Wan and Christian Samundsett and James Bullock and Andres Cuevas",
note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 ; Conference date: 05-06-2016 Through 10-06-2016",
year = "2016",
month = nov,
day = "18",
doi = "10.1109/PVSC.2016.7749584",
language = "English",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "230--233",
booktitle = "2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016",
address = "United States",
}