TY - GEN
T1 - Low stress, anomalous dispersive silicon nitride waveguides fabricated by reactive sputtering
AU - Frigg, Andreas
AU - Boes, Andreas
AU - Ren, Guanghui
AU - Choi, Duk Yong
AU - Gees, Silvio
AU - Mitchell, Arnan
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/6
Y1 - 2019/6
N2 - Silicon nitride (SiN) waveguides are a promising platform for nonlinear photonic devices, as it offers a large bandgap, low two-photon absorption, CMOS-compatible fabrication methods and a significant nonlinearity [1,2]. Prominent applications are optical frequency comb generation [2] and supercontinuum generation [3]. These applications require waveguides with an anomalous group velocity dispersion in order to be efficient, which can be achieved by tailoring the waveguide dimensions [2,3]. Optical-quality SiN films are commonly deposited by LPCVD, however the high processing temperatures (> 800 ° C) can cause a high layer stress and crack formation. In this work we investigate reactive magnetron sputtering (PVD) as a method for low temperature (< 150 °C) deposition of SiN thin-films for optical waveguides.
AB - Silicon nitride (SiN) waveguides are a promising platform for nonlinear photonic devices, as it offers a large bandgap, low two-photon absorption, CMOS-compatible fabrication methods and a significant nonlinearity [1,2]. Prominent applications are optical frequency comb generation [2] and supercontinuum generation [3]. These applications require waveguides with an anomalous group velocity dispersion in order to be efficient, which can be achieved by tailoring the waveguide dimensions [2,3]. Optical-quality SiN films are commonly deposited by LPCVD, however the high processing temperatures (> 800 ° C) can cause a high layer stress and crack formation. In this work we investigate reactive magnetron sputtering (PVD) as a method for low temperature (< 150 °C) deposition of SiN thin-films for optical waveguides.
UR - https://www.scopus.com/pages/publications/85074652030
U2 - 10.1109/CLEOE-EQEC.2019.8873255
DO - 10.1109/CLEOE-EQEC.2019.8873255
M3 - Conference Paper
T3 - 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019
BT - 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 Conference on Lasers and Electro-Optics Europe and European Quantum Electronics Conference, CLEO/Europe-EQEC 2019
Y2 - 23 June 2019 through 27 June 2019
ER -