Low surface recombination velocities achieved by silicon dioxide grown electrochemically in nitric acid

Engineering

• Surface Recombination Velocity 100%
• Passivation 80%
• Alternating Current 80%
• Direct Current 80%
• Solar Cell 40%
• Bulk Lifetime 40%
• Room Temperature 20%
• Silicon Wafer 20%
• Low-Temperature 20%
• Test Structure 20%
• Charge Density 20%
• Defect Density 20%

Material Science

• Oxidation Reaction 100%
• Silicon Dioxide 100%
• Solar Cell 33%
• Oxide Compound 16%
• Silicon Wafer 16%
• Density 16%
• Surface Passivation 16%
• Defect Density 16%