Low temperature MOCVD of Hg1-xCdxTe on 311, 511, 711 and shaped GaAs

G. N. Pain; C. Sandford; G. K.G. Smith; A. W. Stevenson; D. Gao; L. S. Wielunski; S. P. Russo; G. K. Reeves; R. Elliman

doi:10.1016/0022-0248(91)90529-E

Low temperature MOCVD of Hg_1-xCd_xTe on 311, 511, 711 and shaped GaAs

G. N. Pain^*, C. Sandford, G. K.G. Smith, A. W. Stevenson, D. Gao, L. S. Wielunski, S. P. Russo, G. K. Reeves, R. Elliman

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

The influence of six new GaAs substrate orientations on the surface morphology and defect hillocks of epitaxial Hg_1-xCd_xTe (MCT) layers, grown by low temperature MOCVD, is investigated using Nomarski interference contrast microscopy and SEM. Smoother epitaxial layers are obtained on (311), (511) and (711) substrates of A or B polarity compared with growth on (100) or (100) 2° off toward (110) substrates. The quality and orientation of the layers was monitored by X-ray techniques, Rutherford backscattering/channeling and selected area electron channeling patterns. Absolute polarity determination by X-ray diffraction confirmed that the epilayers adopted the polarity of the substrate. Conformal growth on contoured substrates revealed preferential facet formation and growth rate variation which leads to local composition changes in the interdiffused multilayer process. The growth hillocks commonly observed in epitaxy of MCT are related to the oval defects in III-V compounds, and dissolve on annealing.

Original language	English
Pages (from-to)	610-620
Number of pages	11
Journal	Journal of Crystal Growth
Volume	107
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(91)90529-E
Publication status	Published - 1 Jan 1991
Externally published	Yes

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@article{8b2fb13565ed407aa41cc8a802465932,

title = "Low temperature MOCVD of Hg1-xCdxTe on 311, 511, 711 and shaped GaAs",

abstract = "The influence of six new GaAs substrate orientations on the surface morphology and defect hillocks of epitaxial Hg1-xCdxTe (MCT) layers, grown by low temperature MOCVD, is investigated using Nomarski interference contrast microscopy and SEM. Smoother epitaxial layers are obtained on (311), (511) and (711) substrates of A or B polarity compared with growth on (100) or (100) 2° off toward (110) substrates. The quality and orientation of the layers was monitored by X-ray techniques, Rutherford backscattering/channeling and selected area electron channeling patterns. Absolute polarity determination by X-ray diffraction confirmed that the epilayers adopted the polarity of the substrate. Conformal growth on contoured substrates revealed preferential facet formation and growth rate variation which leads to local composition changes in the interdiffused multilayer process. The growth hillocks commonly observed in epitaxy of MCT are related to the oval defects in III-V compounds, and dissolve on annealing.",

author = "Pain, {G. N.} and C. Sandford and Smith, {G. K.G.} and Stevenson, {A. W.} and D. Gao and Wielunski, {L. S.} and Russo, {S. P.} and Reeves, {G. K.} and R. Elliman",

year = "1991",

month = jan,

day = "1",

doi = "10.1016/0022-0248(91)90529-E",

language = "English",

volume = "107",

pages = "610--620",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - Low temperature MOCVD of Hg1-xCdxTe on 311, 511, 711 and shaped GaAs

AU - Pain, G. N.

AU - Sandford, C.

AU - Smith, G. K.G.

AU - Stevenson, A. W.

AU - Gao, D.

AU - Wielunski, L. S.

AU - Russo, S. P.

AU - Reeves, G. K.

AU - Elliman, R.

PY - 1991/1/1

Y1 - 1991/1/1

N2 - The influence of six new GaAs substrate orientations on the surface morphology and defect hillocks of epitaxial Hg1-xCdxTe (MCT) layers, grown by low temperature MOCVD, is investigated using Nomarski interference contrast microscopy and SEM. Smoother epitaxial layers are obtained on (311), (511) and (711) substrates of A or B polarity compared with growth on (100) or (100) 2° off toward (110) substrates. The quality and orientation of the layers was monitored by X-ray techniques, Rutherford backscattering/channeling and selected area electron channeling patterns. Absolute polarity determination by X-ray diffraction confirmed that the epilayers adopted the polarity of the substrate. Conformal growth on contoured substrates revealed preferential facet formation and growth rate variation which leads to local composition changes in the interdiffused multilayer process. The growth hillocks commonly observed in epitaxy of MCT are related to the oval defects in III-V compounds, and dissolve on annealing.

AB - The influence of six new GaAs substrate orientations on the surface morphology and defect hillocks of epitaxial Hg1-xCdxTe (MCT) layers, grown by low temperature MOCVD, is investigated using Nomarski interference contrast microscopy and SEM. Smoother epitaxial layers are obtained on (311), (511) and (711) substrates of A or B polarity compared with growth on (100) or (100) 2° off toward (110) substrates. The quality and orientation of the layers was monitored by X-ray techniques, Rutherford backscattering/channeling and selected area electron channeling patterns. Absolute polarity determination by X-ray diffraction confirmed that the epilayers adopted the polarity of the substrate. Conformal growth on contoured substrates revealed preferential facet formation and growth rate variation which leads to local composition changes in the interdiffused multilayer process. The growth hillocks commonly observed in epitaxy of MCT are related to the oval defects in III-V compounds, and dissolve on annealing.

UR - http://www.scopus.com/inward/record.url?scp=0025781966&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(91)90529-E

DO - 10.1016/0022-0248(91)90529-E

M3 - Article

AN - SCOPUS:0025781966

SN - 0022-0248

VL - 107

SP - 610

EP - 620

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Low temperature MOCVD of Hg_1-xCd_xTe on 311, 511, 711 and shaped GaAs

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