Low-temperature, site selective graphitization of SiC via ion implantation and pulsed laser annealing

Maxime G. Lemaitre, Sefaattin Tongay, Xiaotie Wang, Dinesh K. Venkatachalam, Joel Fridmann, Brent P. Gila, Arthur F. Hebard, Fan Ren, Robert G. Elliman, Bill R. Appleton*

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    18 Citations (Scopus)

    Abstract

    A technique is presented to selectively graphitize regions of SiC by ion implantation and pulsed laser annealing (PLA). Nanoscale features are patterned over large areas by multi-ion beam lithography and subsequently converted to few-layer graphene via PLA in air. Graphitization occurs only where ions have been implanted and without elevating the temperature of the surrounding substrate. Samples were characterized using Raman spectroscopy, ion scattering/channeling, SEM, and AFM, from which the degree of graphitization was determined to vary with implantation species, damage and dose, laser fluence, and pulsing. Contrasting growth regimes and graphitization mechanisms during PLA are discussed.

    Original languageEnglish
    Article number193105
    JournalApplied Physics Letters
    Volume100
    Issue number19
    DOIs
    Publication statusPublished - 7 May 2012

    Fingerprint

    Dive into the research topics of 'Low-temperature, site selective graphitization of SiC via ion implantation and pulsed laser annealing'. Together they form a unique fingerprint.

    Cite this