Low-temperature, site selective graphitization of SiC via ion implantation and pulsed laser annealing

Maxime G. Lemaitre; Sefaattin Tongay; Xiaotie Wang; Dinesh K. Venkatachalam; Joel Fridmann; Brent P. Gila; Arthur F. Hebard; Fan Ren; Robert G. Elliman; Bill R. Appleton

doi:10.1063/1.4707383

Low-temperature, site selective graphitization of SiC via ion implantation and pulsed laser annealing

Maxime G. Lemaitre, Sefaattin Tongay, Xiaotie Wang, Dinesh K. Venkatachalam, Joel Fridmann, Brent P. Gila, Arthur F. Hebard, Fan Ren, Robert G. Elliman, Bill R. Appleton^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

A technique is presented to selectively graphitize regions of SiC by ion implantation and pulsed laser annealing (PLA). Nanoscale features are patterned over large areas by multi-ion beam lithography and subsequently converted to few-layer graphene via PLA in air. Graphitization occurs only where ions have been implanted and without elevating the temperature of the surrounding substrate. Samples were characterized using Raman spectroscopy, ion scattering/channeling, SEM, and AFM, from which the degree of graphitization was determined to vary with implantation species, damage and dose, laser fluence, and pulsing. Contrasting growth regimes and graphitization mechanisms during PLA are discussed.

Original language	English
Article number	193105
Journal	Applied Physics Letters
Volume	100
Issue number	19
DOIs	https://doi.org/10.1063/1.4707383
Publication status	Published - 7 May 2012

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title = "Low-temperature, site selective graphitization of SiC via ion implantation and pulsed laser annealing",

abstract = "A technique is presented to selectively graphitize regions of SiC by ion implantation and pulsed laser annealing (PLA). Nanoscale features are patterned over large areas by multi-ion beam lithography and subsequently converted to few-layer graphene via PLA in air. Graphitization occurs only where ions have been implanted and without elevating the temperature of the surrounding substrate. Samples were characterized using Raman spectroscopy, ion scattering/channeling, SEM, and AFM, from which the degree of graphitization was determined to vary with implantation species, damage and dose, laser fluence, and pulsing. Contrasting growth regimes and graphitization mechanisms during PLA are discussed.",

author = "Lemaitre, {Maxime G.} and Sefaattin Tongay and Xiaotie Wang and Venkatachalam, {Dinesh K.} and Joel Fridmann and Gila, {Brent P.} and Hebard, {Arthur F.} and Fan Ren and Elliman, {Robert G.} and Appleton, {Bill R.}",

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T1 - Low-temperature, site selective graphitization of SiC via ion implantation and pulsed laser annealing

AU - Lemaitre, Maxime G.

AU - Tongay, Sefaattin

AU - Wang, Xiaotie

AU - Venkatachalam, Dinesh K.

AU - Fridmann, Joel

AU - Gila, Brent P.

AU - Hebard, Arthur F.

AU - Ren, Fan

AU - Elliman, Robert G.

AU - Appleton, Bill R.

PY - 2012/5/7

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N2 - A technique is presented to selectively graphitize regions of SiC by ion implantation and pulsed laser annealing (PLA). Nanoscale features are patterned over large areas by multi-ion beam lithography and subsequently converted to few-layer graphene via PLA in air. Graphitization occurs only where ions have been implanted and without elevating the temperature of the surrounding substrate. Samples were characterized using Raman spectroscopy, ion scattering/channeling, SEM, and AFM, from which the degree of graphitization was determined to vary with implantation species, damage and dose, laser fluence, and pulsing. Contrasting growth regimes and graphitization mechanisms during PLA are discussed.

AB - A technique is presented to selectively graphitize regions of SiC by ion implantation and pulsed laser annealing (PLA). Nanoscale features are patterned over large areas by multi-ion beam lithography and subsequently converted to few-layer graphene via PLA in air. Graphitization occurs only where ions have been implanted and without elevating the temperature of the surrounding substrate. Samples were characterized using Raman spectroscopy, ion scattering/channeling, SEM, and AFM, from which the degree of graphitization was determined to vary with implantation species, damage and dose, laser fluence, and pulsing. Contrasting growth regimes and graphitization mechanisms during PLA are discussed.

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DO - 10.1063/1.4707383

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VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Low-temperature, site selective graphitization of SiC via ion implantation and pulsed laser annealing

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