Macroporous Si as an absorber for thin-film solar cells

Rolf Brendel; Marco Ernst

doi:10.1002/pssr.200903372

Macroporous Si as an absorber for thin-film solar cells

Rolf Brendel^*, Marco Ernst

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

We separate 15 μm to 32 μm thick macroporous Si films from n-type crystalline Si wafers by electrochemical etching under back-side illumination. These layers are surface passivated and have openings in the oxide, for local doping and contacting, over 1% of the cell area. We measure effective lifetimes within a range of 2 to 3 μs. With an analytical model for the effective lifetime in macroporous Si we find an average surface recombination velocity of 75 cm/s, dominantly caused by the contact openings. The measured optical absorption of a 26 μm thick layer allows for a maximum short circuit current density of 37 mA/cm². The potential efficiency with the current surface passivation quality is 17%. The mate- rial loss for separating the macroporous absorber from the wafer is 5 μm.

Original language	English
Pages (from-to)	40-42
Number of pages	3
Journal	Physica Status Solidi - Rapid Research Letters
Volume	4
Issue number	1-2
DOIs	https://doi.org/10.1002/pssr.200903372
Publication status	Published - 2010
Externally published	Yes

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title = "Macroporous Si as an absorber for thin-film solar cells",

abstract = "We separate 15 μm to 32 μm thick macroporous Si films from n-type crystalline Si wafers by electrochemical etching under back-side illumination. These layers are surface passivated and have openings in the oxide, for local doping and contacting, over 1% of the cell area. We measure effective lifetimes within a range of 2 to 3 μs. With an analytical model for the effective lifetime in macroporous Si we find an average surface recombination velocity of 75 cm/s, dominantly caused by the contact openings. The measured optical absorption of a 26 μm thick layer allows for a maximum short circuit current density of 37 mA/cm2. The potential efficiency with the current surface passivation quality is 17%. The mate- rial loss for separating the macroporous absorber from the wafer is 5 μm.",

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AU - Ernst, Marco

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AB - We separate 15 μm to 32 μm thick macroporous Si films from n-type crystalline Si wafers by electrochemical etching under back-side illumination. These layers are surface passivated and have openings in the oxide, for local doping and contacting, over 1% of the cell area. We measure effective lifetimes within a range of 2 to 3 μs. With an analytical model for the effective lifetime in macroporous Si we find an average surface recombination velocity of 75 cm/s, dominantly caused by the contact openings. The measured optical absorption of a 26 μm thick layer allows for a maximum short circuit current density of 37 mA/cm2. The potential efficiency with the current surface passivation quality is 17%. The mate- rial loss for separating the macroporous absorber from the wafer is 5 μm.

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JF - Physica Status Solidi - Rapid Research Letters

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Macroporous Si as an absorber for thin-film solar cells

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