Magneto-optical properties of wurtzite-phase InP nanowires

M. De Luca; A. Polimeni; H. A. Fonseka; A. J. Meaney; P. C.M. Christianen; J. C. Maan; S. Paiman; H. H. Tan; F. Mura; C. Jagadish; M. Capizzi

doi:10.1021/nl500870e

Magneto-optical properties of wurtzite-phase InP nanowires

M. De Luca, A. Polimeni^*, H. A. Fonseka, A. J. Meaney, P. C.M. Christianen, J. C. Maan, S. Paiman, H. H. Tan, F. Mura, C. Jagadish, M. Capizzi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

The possibility to grow in zincblende (ZB) and/or wurtzite (WZ) crystal phase widens the potential applications of semiconductor nanowires (NWs). This is particularly true in technologically relevant III-V compounds, such as GaAs, InAs, and InP, for which WZ is not available in bulk form. The WZ band structure of many III-V NWs has been widely studied. Yet, transport (that is, carrier effective mass) and spin (that is, carrier g-factor) properties are almost experimentally unknown. We address these issues in a well-characterized material: WZ indium phosphide. The value and anisotropy of the reduced mass (μ_exc) and g-factor (g_exc) of the band gap exciton are determined by photoluminescence measurements under intense magnetic fields (B, up to 28 T) applied along different crystallographic directions. μ_exc is 14% greater in WZ NWs than in a ZB bulk reference and it is 6% greater in a plane containing the WZ ĉ axis than in a plane orthogonal to ĉ. The Zeeman splitting is markedly anisotropic with g _exc = |g_e| = 1.4 for Bĉ (where g_e is the electron g-factor) and g_exc = |g_e - g_h,//| = 3.5 for B//ĉ (where g_h,// is the hole g-factor). A noticeable B-induced circular dichroism of the emitted photons is found only for B//ĉ, as expected in WZ-phase materials.

Original language	English
Pages (from-to)	4250-4256
Number of pages	7
Journal	Nano Letters
Volume	14
Issue number	8
DOIs	https://doi.org/10.1021/nl500870e
Publication status	Published - 13 Aug 2014

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10.1021/nl500870e

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@article{d174f5f6ac8d45ceab0d67719b2a5fe6,

title = "Magneto-optical properties of wurtzite-phase InP nanowires",

abstract = "The possibility to grow in zincblende (ZB) and/or wurtzite (WZ) crystal phase widens the potential applications of semiconductor nanowires (NWs). This is particularly true in technologically relevant III-V compounds, such as GaAs, InAs, and InP, for which WZ is not available in bulk form. The WZ band structure of many III-V NWs has been widely studied. Yet, transport (that is, carrier effective mass) and spin (that is, carrier g-factor) properties are almost experimentally unknown. We address these issues in a well-characterized material: WZ indium phosphide. The value and anisotropy of the reduced mass (μexc) and g-factor (gexc) of the band gap exciton are determined by photoluminescence measurements under intense magnetic fields (B, up to 28 T) applied along different crystallographic directions. μexc is 14% greater in WZ NWs than in a ZB bulk reference and it is 6% greater in a plane containing the WZ ĉ axis than in a plane orthogonal to ĉ. The Zeeman splitting is markedly anisotropic with g exc = |ge| = 1.4 for Bĉ (where ge is the electron g-factor) and gexc = |ge - gh,//| = 3.5 for B//ĉ (where gh,// is the hole g-factor). A noticeable B-induced circular dichroism of the emitted photons is found only for B//ĉ, as expected in WZ-phase materials.",

keywords = "Semiconductor nanowires, effective mass, gyromagnetic factor, magneto-photoluminescence, wurtzite-phase InP",

author = "{De Luca}, M. and A. Polimeni and Fonseka, {H. A.} and Meaney, {A. J.} and Christianen, {P. C.M.} and Maan, {J. C.} and S. Paiman and Tan, {H. H.} and F. Mura and C. Jagadish and M. Capizzi",

year = "2014",

month = aug,

day = "13",

doi = "10.1021/nl500870e",

language = "English",

volume = "14",

pages = "4250--4256",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "8",

}

TY - JOUR

T1 - Magneto-optical properties of wurtzite-phase InP nanowires

AU - De Luca, M.

AU - Polimeni, A.

AU - Fonseka, H. A.

AU - Meaney, A. J.

AU - Christianen, P. C.M.

AU - Maan, J. C.

AU - Paiman, S.

AU - Tan, H. H.

AU - Mura, F.

AU - Jagadish, C.

AU - Capizzi, M.

PY - 2014/8/13

Y1 - 2014/8/13

N2 - The possibility to grow in zincblende (ZB) and/or wurtzite (WZ) crystal phase widens the potential applications of semiconductor nanowires (NWs). This is particularly true in technologically relevant III-V compounds, such as GaAs, InAs, and InP, for which WZ is not available in bulk form. The WZ band structure of many III-V NWs has been widely studied. Yet, transport (that is, carrier effective mass) and spin (that is, carrier g-factor) properties are almost experimentally unknown. We address these issues in a well-characterized material: WZ indium phosphide. The value and anisotropy of the reduced mass (μexc) and g-factor (gexc) of the band gap exciton are determined by photoluminescence measurements under intense magnetic fields (B, up to 28 T) applied along different crystallographic directions. μexc is 14% greater in WZ NWs than in a ZB bulk reference and it is 6% greater in a plane containing the WZ ĉ axis than in a plane orthogonal to ĉ. The Zeeman splitting is markedly anisotropic with g exc = |ge| = 1.4 for Bĉ (where ge is the electron g-factor) and gexc = |ge - gh,//| = 3.5 for B//ĉ (where gh,// is the hole g-factor). A noticeable B-induced circular dichroism of the emitted photons is found only for B//ĉ, as expected in WZ-phase materials.

AB - The possibility to grow in zincblende (ZB) and/or wurtzite (WZ) crystal phase widens the potential applications of semiconductor nanowires (NWs). This is particularly true in technologically relevant III-V compounds, such as GaAs, InAs, and InP, for which WZ is not available in bulk form. The WZ band structure of many III-V NWs has been widely studied. Yet, transport (that is, carrier effective mass) and spin (that is, carrier g-factor) properties are almost experimentally unknown. We address these issues in a well-characterized material: WZ indium phosphide. The value and anisotropy of the reduced mass (μexc) and g-factor (gexc) of the band gap exciton are determined by photoluminescence measurements under intense magnetic fields (B, up to 28 T) applied along different crystallographic directions. μexc is 14% greater in WZ NWs than in a ZB bulk reference and it is 6% greater in a plane containing the WZ ĉ axis than in a plane orthogonal to ĉ. The Zeeman splitting is markedly anisotropic with g exc = |ge| = 1.4 for Bĉ (where ge is the electron g-factor) and gexc = |ge - gh,//| = 3.5 for B//ĉ (where gh,// is the hole g-factor). A noticeable B-induced circular dichroism of the emitted photons is found only for B//ĉ, as expected in WZ-phase materials.

KW - Semiconductor nanowires

KW - effective mass

KW - gyromagnetic factor

KW - magneto-photoluminescence

KW - wurtzite-phase InP

UR - http://www.scopus.com/inward/record.url?scp=84906091514&partnerID=8YFLogxK

U2 - 10.1021/nl500870e

DO - 10.1021/nl500870e

M3 - Article

SN - 1530-6984

VL - 14

SP - 4250

EP - 4256

JO - Nano Letters

JF - Nano Letters

IS - 8

ER -

Magneto-optical properties of wurtzite-phase InP nanowires

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