Managing Resonant and Nonresonant Lasing Modes in GaAs Nanowire Random Lasers

Mohammad Rashidi*, Tuomas Haggren, Zhicheng Su, Chennupati Jagadish, Sudha Mokkapati, Hark H. Tan*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

27 Citations (Scopus)

Abstract

Random lasers are promising, easy-to-fabricate light sources that rely on scattering instead of well-defined optical cavities. We demonstrate random lasing in GaAs nanowires using both randomly oriented and vertically aligned arrays. These configurations are shown to lase in both resonant and nonresonant modes, where aligned nanowires support predominantly resonant lasing and randomly oriented favors nonresonant lasing. On the basis of numerical simulations, aligning the nanowires increases the system's scattering efficiency leading to higher quality factor modes and thus favoring the resonant modes. We further demonstrate two methods to optically suppress resonant mode lasing by increasing the number of excited modes. The light output-light input curves show a pronounced kink for the resonant lasing mode while the nonresonant mode is kink-free. The resonant lasing modes may be used as tunable lasers, and the nonresonant modes exhibit near-thresholdless amplification. Switching between lasing modes opens up new opportunities to use lasers in broader applications.

Original languageEnglish
Pages (from-to)3901-3907
Number of pages7
JournalNano Letters
Volume21
Issue number9
DOIs
Publication statusPublished - 12 May 2021

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