Massive Offset in Electronic Structure of Deep Nanoscale Si by SiO2- vs. Si3N4-Embedding to Replace Impurity Doping (invited talk)

Dirk Koenig; Noël Wilck; Daniel Hiller; Birger Berghoff; Alexander Meledin; Giovanni Di Santo; Luca Petaccia; Joachim Mayer; Sean C. Smith; Joachim Knoch

Massive Offset in Electronic Structure of Deep Nanoscale Si by SiO2- vs. Si3N4-Embedding to Replace Impurity Doping (invited talk)

Dirk Koenig^*, Noël Wilck, Daniel Hiller, Birger Berghoff, Alexander Meledin, Giovanni Di Santo, Luca Petaccia, Joachim Mayer, Sean C. Smith, Joachim Knoch

^*Corresponding author for this work

Research output: Contribution to conference › Abstract › peer-review

Original language	English
Publication status	Published - 7 Jun 2019

Cite this

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title = "Massive Offset in Electronic Structure of Deep Nanoscale Si by SiO2- vs. Si3N4-Embedding to Replace Impurity Doping (invited talk)",

author = "Dirk Koenig and No{\"e}l Wilck and Daniel Hiller and Birger Berghoff and Alexander Meledin and \{Di Santo\}, Giovanni and Luca Petaccia and Joachim Mayer and Smith, \{Sean C.\} and Joachim Knoch",

year = "2019",

month = jun,

day = "7",

language = "English",

}

TY - CONF

T1 - Massive Offset in Electronic Structure of Deep Nanoscale Si by SiO2- vs. Si3N4-Embedding to Replace Impurity Doping (invited talk)

AU - Koenig, Dirk

AU - Wilck, Noël

AU - Hiller, Daniel

AU - Berghoff, Birger

AU - Meledin, Alexander

AU - Di Santo, Giovanni

AU - Petaccia, Luca

AU - Mayer, Joachim

AU - Smith, Sean C.

AU - Knoch, Joachim

PY - 2019/6/7

Y1 - 2019/6/7

M3 - Abstract

ER -