Abstract
Talk R.6.7
Mathematical description of nanocrystal size, shape and surface orientation as tool to interpret solid state spectroscopy data
Authors: Dirk König
Affiliations: Integrated Materials Design Centre (IMDC), University of New South Wales (UNSW), Sydney, Australia
Semiconductor nanocrystals (NCs) experience stress and charge transfer by embedding materials or ligands and impurity atoms. In return, the environment of NCs experiences a NC stress response which may lead to matrix deformation and propagated strain. Up to now, there is no universal gauge to evaluate the stress impact on zinc blende (zb) and diamond lattice NCs and their response as a function of NC size. I deduced geometrical number series as analytical tools to obtain the number of NC atoms, bonds between such NC atoms and interface bonds of such NCs for seven high symmetry zb and diamond lattice NCs with low-index faceting: {001} cubes, {111} octahedra, {110} dodecahedra, {001}-{111} pyramids, {111} tetrahedra, {111}-{001} quatrodecahedra and {001}-{111} quadrodecahedra [1,2]. These fundamental insights into NC structures allow for major advancements in data interpretation and understanding of zb- and diamond-lattice based nanomaterials [3-7]. The analytical number series can serve as a standard procedure for stress evaluation in solid state spectroscopy due to their deterministic nature, easy use and general applicability over a wide range of spectroscopy methods as well as NC sizes, forms and materials.
[1] D. König, AIP Adv. 6, 085306 (2016) {open access}
[2] https://youtu.be/v8Ni_LlbdZQ
[3] D. König, D. Hiller, S. Gutsch, M. Zacharias, Adv. Mater. Interfaces 1, 1400359 (2014)
[4] D. König, S. Gutsch, H. Gnaser, M. Wahl, M. Kopnarski, J. Göttlicher, R. Steininger, M. Zacharias, D. Hiller, Sci. Rep. 5, 09702 (2015) {open access}
[5] A.R. Stegner, R.N. Pereira, R. Lechner, K. Klein, H. Wiggers, M. Stutzmann, M.S. Brandt, Phys. Rev. B 80, 165326 (2009)
[6] G.M. Dalpian, J.R. Chelikowsky, Phys. Rev. Lett. 96, 226802 (2006)
[7] J. Ibanez, S. Hernandez, J. Lopez-Vidrier, D. Hiller, S. Gutsch, M. Zacharias, A. Segura, J. Valenta, B. Garrido, Phys. Rev. B 92, 035432 (2015)
Mathematical description of nanocrystal size, shape and surface orientation as tool to interpret solid state spectroscopy data
Authors: Dirk König
Affiliations: Integrated Materials Design Centre (IMDC), University of New South Wales (UNSW), Sydney, Australia
Semiconductor nanocrystals (NCs) experience stress and charge transfer by embedding materials or ligands and impurity atoms. In return, the environment of NCs experiences a NC stress response which may lead to matrix deformation and propagated strain. Up to now, there is no universal gauge to evaluate the stress impact on zinc blende (zb) and diamond lattice NCs and their response as a function of NC size. I deduced geometrical number series as analytical tools to obtain the number of NC atoms, bonds between such NC atoms and interface bonds of such NCs for seven high symmetry zb and diamond lattice NCs with low-index faceting: {001} cubes, {111} octahedra, {110} dodecahedra, {001}-{111} pyramids, {111} tetrahedra, {111}-{001} quatrodecahedra and {001}-{111} quadrodecahedra [1,2]. These fundamental insights into NC structures allow for major advancements in data interpretation and understanding of zb- and diamond-lattice based nanomaterials [3-7]. The analytical number series can serve as a standard procedure for stress evaluation in solid state spectroscopy due to their deterministic nature, easy use and general applicability over a wide range of spectroscopy methods as well as NC sizes, forms and materials.
[1] D. König, AIP Adv. 6, 085306 (2016) {open access}
[2] https://youtu.be/v8Ni_LlbdZQ
[3] D. König, D. Hiller, S. Gutsch, M. Zacharias, Adv. Mater. Interfaces 1, 1400359 (2014)
[4] D. König, S. Gutsch, H. Gnaser, M. Wahl, M. Kopnarski, J. Göttlicher, R. Steininger, M. Zacharias, D. Hiller, Sci. Rep. 5, 09702 (2015) {open access}
[5] A.R. Stegner, R.N. Pereira, R. Lechner, K. Klein, H. Wiggers, M. Stutzmann, M.S. Brandt, Phys. Rev. B 80, 165326 (2009)
[6] G.M. Dalpian, J.R. Chelikowsky, Phys. Rev. Lett. 96, 226802 (2006)
[7] J. Ibanez, S. Hernandez, J. Lopez-Vidrier, D. Hiller, S. Gutsch, M. Zacharias, A. Segura, J. Valenta, B. Garrido, Phys. Rev. B 92, 035432 (2015)
Original language | English |
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Publication status | Published - 26 May 2017 |
Externally published | Yes |