Maximizing electrical activation of ion-implanted Si in In 0.53Ga0.47As

A. G. Lind*, N. G. Rudawski, N. J. Vito, C. Hatem, M. C. Ridgway, R. Hengstebeck, B. R. Yates, K. S. Jones

*Corresponding author for this work

    Research output: Contribution to journal › Article › peer-review

    15 Citations (Scopus)

    Fingerprint

    Dive into the research topics of 'Maximizing electrical activation of ion-implanted Si in In 0.53Ga0.47As'. Together they form a unique fingerprint.

    Material Science