Abstract
Time-resolved photoluminescence measurements are undertaken to determine the passivation kinetics of luminescence-quenching defects during isothermal and isochronal annealing in molecular and atomic hydrogen. The latter employs an alneal process in which atomic hydrogen is generated by reactions between a deposited Al layer and H2O or -OH radicals in the SiO2. Passivation and desorption kinetics are shown to be consistent with the existence of two classes of non-radiative defects: one that reacts with either atomic or molecular hydrogen, and the other that reacts only with atomic hydrogen.
Original language | English |
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Pages (from-to) | 303-306 |
Number of pages | 4 |
Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
Volume | 242 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - Jan 2006 |