Maximizing light emission from silicon nanocrystals - The role of hydrogen

A. R. Wilkinson, R. G. Elliman*

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    9 Citations (Scopus)

    Abstract

    Time-resolved photoluminescence measurements are undertaken to determine the passivation kinetics of luminescence-quenching defects during isothermal and isochronal annealing in molecular and atomic hydrogen. The latter employs an alneal process in which atomic hydrogen is generated by reactions between a deposited Al layer and H2O or -OH radicals in the SiO2. Passivation and desorption kinetics are shown to be consistent with the existence of two classes of non-radiative defects: one that reacts with either atomic or molecular hydrogen, and the other that reacts only with atomic hydrogen.

    Original languageEnglish
    Pages (from-to)303-306
    Number of pages4
    JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
    Volume242
    Issue number1-2
    DOIs
    Publication statusPublished - Jan 2006

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