Abstract
Time-resolved photoluminescence measurements are undertaken to determine the passivation kinetics of luminescence-quenching defects during isothermal and isochronal annealing in molecular and atomic hydrogen. The latter employs an alneal process in which atomic hydrogen is generated by reactions between a deposited Al layer and H2O or -OH radicals in the SiO2. Passivation and desorption kinetics are shown to be consistent with the existence of two classes of non-radiative defects: one that reacts with either atomic or molecular hydrogen, and the other that reacts only with atomic hydrogen.
| Original language | English |
|---|---|
| Pages (from-to) | 303-306 |
| Number of pages | 4 |
| Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
| Volume | 242 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - Jan 2006 |
Fingerprint
Dive into the research topics of 'Maximizing light emission from silicon nanocrystals - The role of hydrogen'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver