Measurement of doping concentration, internal quantum efficiency and non-radiative lifetime of InP nanowires

Fan Wang; Qian Gao; Kun Peng; Yanan Guo; Zhe Li; Lan Fu; Leigh Morris Smith; Hark Hoe Tan; Chennupati Jagadish

doi:10.1109/COMMAD.2014.7038709

Measurement of doping concentration, internal quantum efficiency and non-radiative lifetime of InP nanowires

Fan Wang^*, Qian Gao, Kun Peng, Yanan Guo, Zhe Li, Lan Fu, Leigh Morris Smith, Hark Hoe Tan, Chennupati Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

We demonstrate an optical method to evaluate the doping concentration, internal quantum efficiency (IQE) and non-radiative lifetime of semiconductor nanowires, through power dependent photoluminescence (PL) and time resolved PL (TRPL) measurement. Combining this method with standard PL and time resolved spectrum, we analyse the quality, band structure and doping distribution of Si doped InP nanowires. The doping result is correlated with electrical measurements of single nano wire device.

Original language	English
Title of host publication	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
Editors	Mariusz Martyniuk, Lorenzo Faraone
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	272-274
Number of pages	3
ISBN (Electronic)	9781479968671
DOIs	https://doi.org/10.1109/COMMAD.2014.7038709
Publication status	Published - 10 Feb 2014
Event	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 - Perth, Australia Duration: 14 Dec 2014 → 17 Dec 2014

Publication series

Name	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

Conference

Conference	2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014
Country/Territory	Australia
City	Perth
Period	14/12/14 → 17/12/14

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10.1109/COMMAD.2014.7038709

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Wang, F., Gao, Q., Peng, K., Guo, Y., Li, Z., Fu, L., Smith, L. M., Tan, H. H., & Jagadish, C. (2014). Measurement of doping concentration, internal quantum efficiency and non-radiative lifetime of InP nanowires. In M. Martyniuk, & L. Faraone (Eds.), 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 (pp. 272-274). Article 7038709 (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/COMMAD.2014.7038709

Wang, Fan ; Gao, Qian ; Peng, Kun et al. / Measurement of doping concentration, internal quantum efficiency and non-radiative lifetime of InP nanowires. 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014. editor / Mariusz Martyniuk ; Lorenzo Faraone. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 272-274 (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014).

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title = "Measurement of doping concentration, internal quantum efficiency and non-radiative lifetime of InP nanowires",

abstract = "We demonstrate an optical method to evaluate the doping concentration, internal quantum efficiency (IQE) and non-radiative lifetime of semiconductor nanowires, through power dependent photoluminescence (PL) and time resolved PL (TRPL) measurement. Combining this method with standard PL and time resolved spectrum, we analyse the quality, band structure and doping distribution of Si doped InP nanowires. The doping result is correlated with electrical measurements of single nano wire device.",

keywords = "doping, non-radiative lifetime, photoluminescence, semiconductor nanowires",

author = "Fan Wang and Qian Gao and Kun Peng and Yanan Guo and Zhe Li and Lan Fu and Smith, {Leigh Morris} and Tan, {Hark Hoe} and Chennupati Jagadish",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014 ; Conference date: 14-12-2014 Through 17-12-2014",

year = "2014",

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doi = "10.1109/COMMAD.2014.7038709",

language = "English",

series = "2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "272--274",

editor = "Mariusz Martyniuk and Lorenzo Faraone",

booktitle = "2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014",

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}

Wang, F, Gao, Q, Peng, K, Guo, Y, Li, Z , Fu, L, Smith, LM, Tan, HH & Jagadish, C 2014, Measurement of doping concentration, internal quantum efficiency and non-radiative lifetime of InP nanowires. in M Martyniuk & L Faraone (eds), 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014., 7038709, 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, Institute of Electrical and Electronics Engineers Inc., pp. 272-274, 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014, Perth, Australia, 14/12/14. https://doi.org/10.1109/COMMAD.2014.7038709

Measurement of doping concentration, internal quantum efficiency and non-radiative lifetime of InP nanowires. / Wang, Fan; Gao, Qian; Peng, Kun et al.
2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014. ed. / Mariusz Martyniuk; Lorenzo Faraone. Institute of Electrical and Electronics Engineers Inc., 2014. p. 272-274 7038709 (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Measurement of doping concentration, internal quantum efficiency and non-radiative lifetime of InP nanowires

AU - Wang, Fan

AU - Gao, Qian

AU - Peng, Kun

AU - Guo, Yanan

AU - Li, Zhe

AU - Fu, Lan

AU - Smith, Leigh Morris

AU - Tan, Hark Hoe

AU - Jagadish, Chennupati

PY - 2014/2/10

Y1 - 2014/2/10

N2 - We demonstrate an optical method to evaluate the doping concentration, internal quantum efficiency (IQE) and non-radiative lifetime of semiconductor nanowires, through power dependent photoluminescence (PL) and time resolved PL (TRPL) measurement. Combining this method with standard PL and time resolved spectrum, we analyse the quality, band structure and doping distribution of Si doped InP nanowires. The doping result is correlated with electrical measurements of single nano wire device.

AB - We demonstrate an optical method to evaluate the doping concentration, internal quantum efficiency (IQE) and non-radiative lifetime of semiconductor nanowires, through power dependent photoluminescence (PL) and time resolved PL (TRPL) measurement. Combining this method with standard PL and time resolved spectrum, we analyse the quality, band structure and doping distribution of Si doped InP nanowires. The doping result is correlated with electrical measurements of single nano wire device.

KW - doping

KW - non-radiative lifetime

KW - photoluminescence

KW - semiconductor nanowires

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U2 - 10.1109/COMMAD.2014.7038709

DO - 10.1109/COMMAD.2014.7038709

M3 - Conference contribution

T3 - 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

SP - 272

EP - 274

BT - 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

A2 - Martyniuk, Mariusz

A2 - Faraone, Lorenzo

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

Y2 - 14 December 2014 through 17 December 2014

ER -

Wang F, Gao Q, Peng K, Guo Y, Li Z , Fu L et al. Measurement of doping concentration, internal quantum efficiency and non-radiative lifetime of InP nanowires. In Martyniuk M, Faraone L, editors, 2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 272-274. 7038709. (2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014). doi: 10.1109/COMMAD.2014.7038709

Measurement of doping concentration, internal quantum efficiency and non-radiative lifetime of InP nanowires

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