Measurement of the damage profile of ion-implanted GaAs using an automated optical profiler

M. Gal; M. C. Wengler; S. Ilyas; I. Rofii; H. H. Tan; C. Jagadish

doi:10.1016/S0168-583X(00)00407-9

Measurement of the damage profile of ion-implanted GaAs using an automated optical profiler

M. Gal^*, M. C. Wengler, S. Ilyas, I. Rofii, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We describe an easy-to-use, computer-controlled optical method capable of determining the damage profiles in ion-implanted semiconductors. Using this method we measured the damage profiles in Si-implanted GaAs of various ion energies and ion doses. The resulting damage profiles are in good agreement with the total vacancy profiles generated by the transport of ions in matter (TRIM95), and the observed channelling effects not included in the TRIM calculations.

Original language	English
Pages (from-to)	528-532
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	173
Issue number	4
DOIs	https://doi.org/10.1016/S0168-583X(00)00407-9
Publication status	Published - Feb 2001

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abstract = "We describe an easy-to-use, computer-controlled optical method capable of determining the damage profiles in ion-implanted semiconductors. Using this method we measured the damage profiles in Si-implanted GaAs of various ion energies and ion doses. The resulting damage profiles are in good agreement with the total vacancy profiles generated by the transport of ions in matter (TRIM95), and the observed channelling effects not included in the TRIM calculations.",

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AU - Rofii, I.

AU - Tan, H. H.

AU - Jagadish, C.

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AB - We describe an easy-to-use, computer-controlled optical method capable of determining the damage profiles in ion-implanted semiconductors. Using this method we measured the damage profiles in Si-implanted GaAs of various ion energies and ion doses. The resulting damage profiles are in good agreement with the total vacancy profiles generated by the transport of ions in matter (TRIM95), and the observed channelling effects not included in the TRIM calculations.

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IS - 4

ER -

Measurement of the damage profile of ion-implanted GaAs using an automated optical profiler

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