Measurements of Si ion stopping in amorphous silicon

Harry J. Whitlow; Heiko Timmers; Robert G. Elliman; Tessica D.M. Weijers; Yanwen Zhang; Juan Uribastera; D. John O'Connor

doi:10.1016/S0168-583X(01)01301-5

Measurements of Si ion stopping in amorphous silicon

Harry J. Whitlow^*, Heiko Timmers, Robert G. Elliman, Tessica D.M. Weijers, Yanwen Zhang, Juan Uribastera, D. John O'Connor

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The stopping of ²⁸Si ions in polycrystalline Si foils has been measured over the energy range 0.1-3.3 MeV per nucleon. For the low energy interval (0.1-0.5 MeV per nucleon), time of flight-energy elastic recoil detection analysis method was used, whilst for the high energy region (1.2-3.3 MeV per nucleon) the energy loss in the same foil was measured using a Si p-i-n diode with the ²⁸Si ions directly incident on the foil following acceleration. Below the stopping maximum the results are in good agreement with literature data based on Doppler shift measurements of short nuclear lifetimes but are about 20% smaller than the SRIM prediction. Above the stopping maximum the data are in agreement with SRIM within the limits of statistical uncertainty.

Original language	English
Pages (from-to)	84-88
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	190
Issue number	1-4
DOIs	https://doi.org/10.1016/S0168-583X(01)01301-5
Publication status	Published - May 2002

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@article{60b0f2bff02d42af896247ee0f9f7fd7,

title = "Measurements of Si ion stopping in amorphous silicon",

abstract = "The stopping of 28Si ions in polycrystalline Si foils has been measured over the energy range 0.1-3.3 MeV per nucleon. For the low energy interval (0.1-0.5 MeV per nucleon), time of flight-energy elastic recoil detection analysis method was used, whilst for the high energy region (1.2-3.3 MeV per nucleon) the energy loss in the same foil was measured using a Si p-i-n diode with the 28Si ions directly incident on the foil following acceleration. Below the stopping maximum the results are in good agreement with literature data based on Doppler shift measurements of short nuclear lifetimes but are about 20% smaller than the SRIM prediction. Above the stopping maximum the data are in agreement with SRIM within the limits of statistical uncertainty.",

keywords = "Energy loss, Silicon, Stopping, Time of flight",

author = "Whitlow, {Harry J.} and Heiko Timmers and Elliman, {Robert G.} and Weijers, {Tessica D.M.} and Yanwen Zhang and Juan Uribastera and {John O'Connor}, D.",

year = "2002",

month = may,

doi = "10.1016/S0168-583X(01)01301-5",

language = "English",

volume = "190",

pages = "84--88",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - Measurements of Si ion stopping in amorphous silicon

AU - Whitlow, Harry J.

AU - Timmers, Heiko

AU - Elliman, Robert G.

AU - Weijers, Tessica D.M.

AU - Zhang, Yanwen

AU - Uribastera, Juan

AU - John O'Connor, D.

PY - 2002/5

Y1 - 2002/5

N2 - The stopping of 28Si ions in polycrystalline Si foils has been measured over the energy range 0.1-3.3 MeV per nucleon. For the low energy interval (0.1-0.5 MeV per nucleon), time of flight-energy elastic recoil detection analysis method was used, whilst for the high energy region (1.2-3.3 MeV per nucleon) the energy loss in the same foil was measured using a Si p-i-n diode with the 28Si ions directly incident on the foil following acceleration. Below the stopping maximum the results are in good agreement with literature data based on Doppler shift measurements of short nuclear lifetimes but are about 20% smaller than the SRIM prediction. Above the stopping maximum the data are in agreement with SRIM within the limits of statistical uncertainty.

AB - The stopping of 28Si ions in polycrystalline Si foils has been measured over the energy range 0.1-3.3 MeV per nucleon. For the low energy interval (0.1-0.5 MeV per nucleon), time of flight-energy elastic recoil detection analysis method was used, whilst for the high energy region (1.2-3.3 MeV per nucleon) the energy loss in the same foil was measured using a Si p-i-n diode with the 28Si ions directly incident on the foil following acceleration. Below the stopping maximum the results are in good agreement with literature data based on Doppler shift measurements of short nuclear lifetimes but are about 20% smaller than the SRIM prediction. Above the stopping maximum the data are in agreement with SRIM within the limits of statistical uncertainty.

KW - Energy loss

KW - Silicon

KW - Stopping

KW - Time of flight

UR - http://www.scopus.com/inward/record.url?scp=0036569460&partnerID=8YFLogxK

U2 - 10.1016/S0168-583X(01)01301-5

DO - 10.1016/S0168-583X(01)01301-5

M3 - Article

SN - 0168-583X

VL - 190

SP - 84

EP - 88

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

ER -

Measurements of Si ion stopping in amorphous silicon

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