Measuring the electrical properties of semiconductor nanowires using terahertz conductivity spectroscopy

Hannah J. Joyce*, Callum J. Docherty, Chaw Keong Yong, Jennifer Wong-Leung, Qiang Gao, Suriati Paiman, H. Hoe Tan, C. Jagadish, James Lloyd-Hughes, Laura M. Herz, Michael B. Johnston

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    Accurately measuring the electronic properties of nanowires is a crucial step in the development of novel semiconductor nanowire-based devices. With this in mind, optical pump-terahertz probe (OPTP) spectroscopy is ideally suited to studies of nanowires: it provides non-contact measurement of carrier transport and dynamics at room temperature. OPTP spectroscopy has been used to assess key electrical properties, including carrier lifetime and carrier mobility, of GaAs, InAs and InP nanowires. The measurements revealed that InAs nanowires exhibited the highest mobilities and InP nanowires exhibited the lowest surface recombination velocity.

    Original languageEnglish
    Title of host publicationMicro/Nano Materials, Devices, and Systems
    DOIs
    Publication statusPublished - 2013
    EventMicro/Nano Materials, Devices, and Systems - Melbourne, VIC, Australia
    Duration: 9 Dec 201311 Dec 2013

    Publication series

    NameProceedings of SPIE - The International Society for Optical Engineering
    Volume8923
    ISSN (Print)0277-786X
    ISSN (Electronic)1996-756X

    Conference

    ConferenceMicro/Nano Materials, Devices, and Systems
    Country/TerritoryAustralia
    CityMelbourne, VIC
    Period9/12/1311/12/13

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