Mechanical deformation of InP and GaAs by spherical indentation

J. E. Bradby; J. S. Williams; J. Wong-Leung; M. V. Swain; P. Munroe

doi:10.1063/1.1372207

Mechanical deformation of InP and GaAs by spherical indentation

J. E. Bradby^*, J. S. Williams, J. Wong-Leung, M. V. Swain, P. Munroe

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

98 Citations (Scopus)

Abstract

The mechanical deformation by spherical indentation of both crystalline InP and GaAs was characterized using cross-sectional transmission electron microscopy (XTEM) and atomic force microscopy. All load-unload curves show a discontinuity (or "pop in") during loading. Slip bands oriented along {111} planes are visible in XTEM micrographs from residual indentations in both materials and no evidence of any phase transformations was found. Higher load indentations (35 mN for InP and 50 mN for GaAs) also revealed subsurface cracking. In contrast no cracking was found beneath a 25 mN InP indent although the hardness and modulus data are almost identical to those of the cracked sample. The subsurface cracks are thought to be nucleated by high stress concentrations caused by dislocation pileup.

Original language	English
Pages (from-to)	3235-3237
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	21
DOIs	https://doi.org/10.1063/1.1372207
Publication status	Published - 21 May 2001

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10.1063/1.1372207

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@article{ab319cfb670c4e189e9f144b9b364c78,

title = "Mechanical deformation of InP and GaAs by spherical indentation",

abstract = "The mechanical deformation by spherical indentation of both crystalline InP and GaAs was characterized using cross-sectional transmission electron microscopy (XTEM) and atomic force microscopy. All load-unload curves show a discontinuity (or {"}pop in{"}) during loading. Slip bands oriented along {111} planes are visible in XTEM micrographs from residual indentations in both materials and no evidence of any phase transformations was found. Higher load indentations (35 mN for InP and 50 mN for GaAs) also revealed subsurface cracking. In contrast no cracking was found beneath a 25 mN InP indent although the hardness and modulus data are almost identical to those of the cracked sample. The subsurface cracks are thought to be nucleated by high stress concentrations caused by dislocation pileup.",

author = "Bradby, {J. E.} and Williams, {J. S.} and J. Wong-Leung and Swain, {M. V.} and P. Munroe",

year = "2001",

month = may,

day = "21",

doi = "10.1063/1.1372207",

language = "English",

volume = "78",

pages = "3235--3237",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "21",

}

TY - JOUR

T1 - Mechanical deformation of InP and GaAs by spherical indentation

AU - Bradby, J. E.

AU - Williams, J. S.

AU - Wong-Leung, J.

AU - Swain, M. V.

AU - Munroe, P.

PY - 2001/5/21

Y1 - 2001/5/21

N2 - The mechanical deformation by spherical indentation of both crystalline InP and GaAs was characterized using cross-sectional transmission electron microscopy (XTEM) and atomic force microscopy. All load-unload curves show a discontinuity (or "pop in") during loading. Slip bands oriented along {111} planes are visible in XTEM micrographs from residual indentations in both materials and no evidence of any phase transformations was found. Higher load indentations (35 mN for InP and 50 mN for GaAs) also revealed subsurface cracking. In contrast no cracking was found beneath a 25 mN InP indent although the hardness and modulus data are almost identical to those of the cracked sample. The subsurface cracks are thought to be nucleated by high stress concentrations caused by dislocation pileup.

AB - The mechanical deformation by spherical indentation of both crystalline InP and GaAs was characterized using cross-sectional transmission electron microscopy (XTEM) and atomic force microscopy. All load-unload curves show a discontinuity (or "pop in") during loading. Slip bands oriented along {111} planes are visible in XTEM micrographs from residual indentations in both materials and no evidence of any phase transformations was found. Higher load indentations (35 mN for InP and 50 mN for GaAs) also revealed subsurface cracking. In contrast no cracking was found beneath a 25 mN InP indent although the hardness and modulus data are almost identical to those of the cracked sample. The subsurface cracks are thought to be nucleated by high stress concentrations caused by dislocation pileup.

UR - http://www.scopus.com/inward/record.url?scp=0039569466&partnerID=8YFLogxK

U2 - 10.1063/1.1372207

DO - 10.1063/1.1372207

M3 - Article

SN - 0003-6951

VL - 78

SP - 3235

EP - 3237

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Mechanical deformation of InP and GaAs by spherical indentation

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