Memory devices using a mixture of MoS2 and graphene oxide as the active layer

Zongyou Yin, Zhiyuan Zeng, Juqing Liu, Qiyuan He, Peng Chen, Hua Zhang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

147 Citations (Scopus)

Abstract

A mixed film consisting of 2D MoS2 and graphene oxide (GO) nanosheets is used to fabricate memory devices. The conductive MoS2 component in the MoS2-GO film increases the film conductivity, thus facilitating oxygen migration in GO. The MoS2-GO film-based device exhibits rewritable, nonvolatile, electrical bistable switching with low switching voltage (≤1.5 V) and high ON/OFF current ratio (≈10 2).

Original languageEnglish
Pages (from-to)727-731
Number of pages5
JournalSmall
Volume9
Issue number5
DOIs
Publication statusPublished - 11 Mar 2013
Externally publishedYes

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