Abstract
A mixed film consisting of 2D MoS2 and graphene oxide (GO) nanosheets is used to fabricate memory devices. The conductive MoS2 component in the MoS2-GO film increases the film conductivity, thus facilitating oxygen migration in GO. The MoS2-GO film-based device exhibits rewritable, nonvolatile, electrical bistable switching with low switching voltage (≤1.5 V) and high ON/OFF current ratio (≈10 2).
Original language | English |
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Pages (from-to) | 727-731 |
Number of pages | 5 |
Journal | Small |
Volume | 9 |
Issue number | 5 |
DOIs | |
Publication status | Published - 11 Mar 2013 |
Externally published | Yes |