Memory devices using a mixture of MoS2 and graphene oxide as the active layer

Zongyou Yin; Zhiyuan Zeng; Juqing Liu; Qiyuan He; Peng Chen; Hua Zhang

doi:10.1002/smll.201201940

Memory devices using a mixture of MoS₂ and graphene oxide as the active layer

Zongyou Yin, Zhiyuan Zeng, Juqing Liu, Qiyuan He, Peng Chen, Hua Zhang^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

149 Citations (SciVal)

Abstract

A mixed film consisting of 2D MoS₂ and graphene oxide (GO) nanosheets is used to fabricate memory devices. The conductive MoS₂ component in the MoS₂-GO film increases the film conductivity, thus facilitating oxygen migration in GO. The MoS₂-GO film-based device exhibits rewritable, nonvolatile, electrical bistable switching with low switching voltage (≤1.5 V) and high ON/OFF current ratio (≈10 ²).

Original language	English
Pages (from-to)	727-731
Number of pages	5
Journal	Small
Volume	9
Issue number	5
DOIs	https://doi.org/10.1002/smll.201201940
Publication status	Published - 11 Mar 2013
Externally published	Yes

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10.1002/smll.201201940

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title = "Memory devices using a mixture of MoS2 and graphene oxide as the active layer",

abstract = "A mixed film consisting of 2D MoS2 and graphene oxide (GO) nanosheets is used to fabricate memory devices. The conductive MoS2 component in the MoS2-GO film increases the film conductivity, thus facilitating oxygen migration in GO. The MoS2-GO film-based device exhibits rewritable, nonvolatile, electrical bistable switching with low switching voltage (≤1.5 V) and high ON/OFF current ratio (≈10 2).",

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year = "2013",

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AU - Yin, Zongyou

AU - Zeng, Zhiyuan

AU - Liu, Juqing

AU - He, Qiyuan

AU - Chen, Peng

AU - Zhang, Hua

PY - 2013/3/11

Y1 - 2013/3/11

N2 - A mixed film consisting of 2D MoS2 and graphene oxide (GO) nanosheets is used to fabricate memory devices. The conductive MoS2 component in the MoS2-GO film increases the film conductivity, thus facilitating oxygen migration in GO. The MoS2-GO film-based device exhibits rewritable, nonvolatile, electrical bistable switching with low switching voltage (≤1.5 V) and high ON/OFF current ratio (≈10 2).

AB - A mixed film consisting of 2D MoS2 and graphene oxide (GO) nanosheets is used to fabricate memory devices. The conductive MoS2 component in the MoS2-GO film increases the film conductivity, thus facilitating oxygen migration in GO. The MoS2-GO film-based device exhibits rewritable, nonvolatile, electrical bistable switching with low switching voltage (≤1.5 V) and high ON/OFF current ratio (≈10 2).

KW - data storage

KW - graphene oxide

KW - memory devices

KW - molybdenum disulfide

KW - nanosheets

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ER -

Memory devices using a mixture of MoS₂ and graphene oxide as the active layer

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