Memory devices using a mixture of MoS2 and graphene oxide as the active layer

Zongyou Yin; Zhiyuan Zeng; Juqing Liu; Qiyuan He; Peng Chen; Hua Zhang

doi:10.1002/smll.201201940

Memory devices using a mixture of MoS₂ and graphene oxide as the active layer

Zongyou Yin
, Zhiyuan Zeng
, Juqing Liu
, Qiyuan He
, Peng Chen
, Hua Zhang^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

154 Citations (Scopus)

Abstract

A mixed film consisting of 2D MoS₂ and graphene oxide (GO) nanosheets is used to fabricate memory devices. The conductive MoS₂ component in the MoS₂-GO film increases the film conductivity, thus facilitating oxygen migration in GO. The MoS₂-GO film-based device exhibits rewritable, nonvolatile, electrical bistable switching with low switching voltage (≤1.5 V) and high ON/OFF current ratio (≈10 ²).

Original language	English
Pages (from-to)	727-731
Number of pages	5
Journal	Small
Volume	9
Issue number	5
DOIs	https://doi.org/10.1002/smll.201201940
Publication status	Published - 11 Mar 2013
Externally published	Yes

Access to Document

10.1002/smll.201201940

Cite this

@article{dedb96175b3645c5bbfa5a252fa58a4c,

title = "Memory devices using a mixture of MoS2 and graphene oxide as the active layer",

abstract = "A mixed film consisting of 2D MoS2 and graphene oxide (GO) nanosheets is used to fabricate memory devices. The conductive MoS2 component in the MoS2-GO film increases the film conductivity, thus facilitating oxygen migration in GO. The MoS2-GO film-based device exhibits rewritable, nonvolatile, electrical bistable switching with low switching voltage (≤1.5 V) and high ON/OFF current ratio (≈10 2).",

keywords = "data storage, graphene oxide, memory devices, molybdenum disulfide, nanosheets",

author = "Zongyou Yin and Zhiyuan Zeng and Juqing Liu and Qiyuan He and Peng Chen and Hua Zhang",

year = "2013",

month = mar,

day = "11",

doi = "10.1002/smll.201201940",

language = "English",

volume = "9",

pages = "727--731",

journal = "Small",

issn = "1613-6810",

publisher = "Wiley-VCH Verlag GmbH",

number = "5",

}

TY - JOUR

T1 - Memory devices using a mixture of MoS2 and graphene oxide as the active layer

AU - Yin, Zongyou

AU - Zeng, Zhiyuan

AU - Liu, Juqing

AU - He, Qiyuan

AU - Chen, Peng

AU - Zhang, Hua

PY - 2013/3/11

Y1 - 2013/3/11

N2 - A mixed film consisting of 2D MoS2 and graphene oxide (GO) nanosheets is used to fabricate memory devices. The conductive MoS2 component in the MoS2-GO film increases the film conductivity, thus facilitating oxygen migration in GO. The MoS2-GO film-based device exhibits rewritable, nonvolatile, electrical bistable switching with low switching voltage (≤1.5 V) and high ON/OFF current ratio (≈10 2).

AB - A mixed film consisting of 2D MoS2 and graphene oxide (GO) nanosheets is used to fabricate memory devices. The conductive MoS2 component in the MoS2-GO film increases the film conductivity, thus facilitating oxygen migration in GO. The MoS2-GO film-based device exhibits rewritable, nonvolatile, electrical bistable switching with low switching voltage (≤1.5 V) and high ON/OFF current ratio (≈10 2).

KW - data storage

KW - graphene oxide

KW - memory devices

KW - molybdenum disulfide

KW - nanosheets

UR - https://www.scopus.com/pages/publications/84874686135

U2 - 10.1002/smll.201201940

DO - 10.1002/smll.201201940

M3 - Article

SN - 1613-6810

VL - 9

SP - 727

EP - 731

JO - Small

JF - Small

IS - 5

ER -

Memory devices using a mixture of MoS₂ and graphene oxide as the active layer

Abstract

Access to Document

Other files and links

Fingerprint

Cite this