Metal-assisted chemical etching for very high aspect ratio grooves in n-type silicon wafers

Katherine Booker; Maureen Brauers; Erin Crisp; Shakir Rahman; Klaus Weber; Matthew Stocks; Andrew Blakers

doi:10.1088/0960-1317/24/12/125026

Metal-assisted chemical etching for very high aspect ratio grooves in n-type silicon wafers

Katherine Booker, Maureen Brauers, Erin Crisp, Shakir Rahman, Klaus Weber, Matthew Stocks, Andrew Blakers

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Metal-assisted chemical etching (MACE) is an inexpensive, simple method for etching silicon structures, including the etching of high aspect ratio grooves. We improve on the best reported results in this area by etching grooves with aspect ratios of 65 (vertical depths 650 μm) in n-type silicon. The grooves maintain an excellent degree of verticality and show minimal width variation. We elucidate some limiting factors and demonstrate the effect of silicon surface roughness on the groove etching.

Original language	English
Article number	125026
Journal	Journal of Micromechanics and Microengineering
Volume	24
Issue number	12
DOIs	https://doi.org/10.1088/0960-1317/24/12/125026
Publication status	Published - 1 Dec 2014

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10.1088/0960-1317/24/12/125026

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abstract = "Metal-assisted chemical etching (MACE) is an inexpensive, simple method for etching silicon structures, including the etching of high aspect ratio grooves. We improve on the best reported results in this area by etching grooves with aspect ratios of 65 (vertical depths 650 μm) in n-type silicon. The grooves maintain an excellent degree of verticality and show minimal width variation. We elucidate some limiting factors and demonstrate the effect of silicon surface roughness on the groove etching.",

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AU - Booker, Katherine

AU - Brauers, Maureen

AU - Crisp, Erin

AU - Rahman, Shakir

AU - Weber, Klaus

AU - Stocks, Matthew

AU - Blakers, Andrew

PY - 2014/12/1

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N2 - Metal-assisted chemical etching (MACE) is an inexpensive, simple method for etching silicon structures, including the etching of high aspect ratio grooves. We improve on the best reported results in this area by etching grooves with aspect ratios of 65 (vertical depths 650 μm) in n-type silicon. The grooves maintain an excellent degree of verticality and show minimal width variation. We elucidate some limiting factors and demonstrate the effect of silicon surface roughness on the groove etching.

AB - Metal-assisted chemical etching (MACE) is an inexpensive, simple method for etching silicon structures, including the etching of high aspect ratio grooves. We improve on the best reported results in this area by etching grooves with aspect ratios of 65 (vertical depths 650 μm) in n-type silicon. The grooves maintain an excellent degree of verticality and show minimal width variation. We elucidate some limiting factors and demonstrate the effect of silicon surface roughness on the groove etching.

KW - high aspect ratio

KW - metal assisted etching

KW - surface roughness

KW - vertical grooves

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DO - 10.1088/0960-1317/24/12/125026

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ER -

Metal-assisted chemical etching for very high aspect ratio grooves in n-type silicon wafers

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