Abstract
Metal-assisted etching can be used to etch high-aspect-ratio structures in silicon (Si) wafers. Using Au as catalytic metal, we have developed a simple robust technique that allows very high aspect ratio structures to be etched on n-type <1 0 0> substrates. For example, arrays of hundreds of narrow (10 μm) and long (85 mm) trenches can be etched completely through a 650-μm-thick wafer in order to harvest silicon for solar cells using the SLIVER technique. We have developed a method for controlling the porosity of deposited Au films with thicknesses of 10-30 nm in order to achieve uniform etching.
Original language | English |
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Article number | 7355311 |
Pages (from-to) | 393-396 |
Number of pages | 4 |
Journal | IEEE Journal of Photovoltaics |
Volume | 6 |
Issue number | 2 |
DOIs | |
Publication status | Published - Mar 2016 |