TY - JOUR
T1 - Metalorganic chemical vapor deposition of GaAsN epilayers
T2 - Microstructures and optical properties
AU - Gao, Q.
AU - Tan, H. H.
AU - Jagadish, C.
AU - Sun, B. Q.
AU - Gal, M.
AU - Ouyang, L.
AU - Zou, J.
PY - 2004/3/15
Y1 - 2004/3/15
N2 - In this article, we investigate the parameters used in the MOCVD growth of GaAsN epilayers on GaAs substrates and some of their microstructures and optical properties. The N incorporation was found to mainly depend on the growth temperature and the fractional 1,1-dimethylhydrazine molar flow. A thin highly strained interface layer was observed between GaAsN and GaAs, which, contrary to previously published results, was not N enriched. The low-temperature (10K) photoluminescence spectra were composed of several emissions that we attribute to a combination of interband transition and transitions involving localized defect states.
AB - In this article, we investigate the parameters used in the MOCVD growth of GaAsN epilayers on GaAs substrates and some of their microstructures and optical properties. The N incorporation was found to mainly depend on the growth temperature and the fractional 1,1-dimethylhydrazine molar flow. A thin highly strained interface layer was observed between GaAsN and GaAs, which, contrary to previously published results, was not N enriched. The low-temperature (10K) photoluminescence spectra were composed of several emissions that we attribute to a combination of interband transition and transitions involving localized defect states.
KW - A1. Photoluminescence
KW - A1. Transmission electron microscopy
KW - A3. Metalorganic chemical vapor deposition
KW - B1. GaAsN
UR - http://www.scopus.com/inward/record.url?scp=1342327995&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2003.12.068
DO - 10.1016/j.jcrysgro.2003.12.068
M3 - Article
SN - 0022-0248
VL - 264
SP - 92
EP - 97
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-3
ER -