Metalorganic vapor phase epitaxy of wurtzite InP nanowires on GaN

Christoffer Kauppinen; Tuomas Haggren; Harri Lipsanen; Markku Sopanen

doi:10.1063/1.5134964

Metalorganic vapor phase epitaxy of wurtzite InP nanowires on GaN

Christoffer Kauppinen^*, Tuomas Haggren, Harri Lipsanen, Markku Sopanen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The metalorganic vapor phase epitaxy of wurtzite InP nanowires on GaN (0001) is demonstrated. The InP nanowires exhibit the same wurtzite structure as the underlying wurtzite GaN. The photoluminescence studies indicate that the InP nanowires are single-phase wurtzite with high crystalline quality which is supported by transmission and scanning electron microscopy images. The position of the second valence band or valence band splitting energy is also deduced from the photoluminescence data to be Δ AB = 30 meV at room temperature. The InP/GaN heterojunction can enable exotic optoelectronic and spintronic experiments and applications. In addition, these results can enable traditional III-V growth on III-N materials for heterojunction devices.

Original language	English
Article number	093101
Journal	Applied Physics Letters
Volume	116
Issue number	9
DOIs	https://doi.org/10.1063/1.5134964
Publication status	Published - 2 Mar 2020

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title = "Metalorganic vapor phase epitaxy of wurtzite InP nanowires on GaN",

abstract = "The metalorganic vapor phase epitaxy of wurtzite InP nanowires on GaN (0001) is demonstrated. The InP nanowires exhibit the same wurtzite structure as the underlying wurtzite GaN. The photoluminescence studies indicate that the InP nanowires are single-phase wurtzite with high crystalline quality which is supported by transmission and scanning electron microscopy images. The position of the second valence band or valence band splitting energy is also deduced from the photoluminescence data to be Δ AB = 30 meV at room temperature. The InP/GaN heterojunction can enable exotic optoelectronic and spintronic experiments and applications. In addition, these results can enable traditional III-V growth on III-N materials for heterojunction devices.",

author = "Christoffer Kauppinen and Tuomas Haggren and Harri Lipsanen and Markku Sopanen",

note = "Publisher Copyright: {\textcopyright} 2020 Author(s).",

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doi = "10.1063/1.5134964",

language = "English",

volume = "116",

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T1 - Metalorganic vapor phase epitaxy of wurtzite InP nanowires on GaN

AU - Kauppinen, Christoffer

AU - Haggren, Tuomas

AU - Lipsanen, Harri

AU - Sopanen, Markku

PY - 2020/3/2

Y1 - 2020/3/2

N2 - The metalorganic vapor phase epitaxy of wurtzite InP nanowires on GaN (0001) is demonstrated. The InP nanowires exhibit the same wurtzite structure as the underlying wurtzite GaN. The photoluminescence studies indicate that the InP nanowires are single-phase wurtzite with high crystalline quality which is supported by transmission and scanning electron microscopy images. The position of the second valence band or valence band splitting energy is also deduced from the photoluminescence data to be Δ AB = 30 meV at room temperature. The InP/GaN heterojunction can enable exotic optoelectronic and spintronic experiments and applications. In addition, these results can enable traditional III-V growth on III-N materials for heterojunction devices.

AB - The metalorganic vapor phase epitaxy of wurtzite InP nanowires on GaN (0001) is demonstrated. The InP nanowires exhibit the same wurtzite structure as the underlying wurtzite GaN. The photoluminescence studies indicate that the InP nanowires are single-phase wurtzite with high crystalline quality which is supported by transmission and scanning electron microscopy images. The position of the second valence band or valence band splitting energy is also deduced from the photoluminescence data to be Δ AB = 30 meV at room temperature. The InP/GaN heterojunction can enable exotic optoelectronic and spintronic experiments and applications. In addition, these results can enable traditional III-V growth on III-N materials for heterojunction devices.

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DO - 10.1063/1.5134964

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VL - 116

JO - Applied Physics Letters

JF - Applied Physics Letters

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M1 - 093101

ER -

Metalorganic vapor phase epitaxy of wurtzite InP nanowires on GaN

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