MeV implantation into semiconductors

J. S. Williams; R. G. Elliman; M. C. Ridgway; C. Jagadish; S. L. Ellingboe; R. Goldberg; M. Petravic; W. C. Wong; Z. Dezhang; E. Nygren; B. G. Svensson

doi:10.1016/0168-583X(93)96170-H

MeV implantation into semiconductors

J. S. Williams^*, R. G. Elliman, M. C. Ridgway, C. Jagadish, S. L. Ellingboe, R. Goldberg, M. Petravic, W. C. Wong, Z. Dezhang, E. Nygren, B. G. Svensson

^*Corresponding author for this work

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Abstract

This paper reviews recent MeV implantation applications into semiconductors carried out at the Australian National University. Studies of damage, amorphization and dynamic defect annealing in silicon and GaAs/AlGaAs multilayer structures are emphasized, but selected examples of stopping measurements, diffusion, buried compound and alloy formation, electrical isolation and doping are also briefly treated. The particular advantages for solid state studies of controlling the nuclear energy deposition density distribution, and hence defect production, over large depths, are illustrated with appropriate examples.

Original language	English
Pages (from-to)	507-513
Number of pages	7
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	80-81
Issue number	PART 1
DOIs	https://doi.org/10.1016/0168-583X(93)96170-H
Publication status	Published - 3 Jun 1993

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Williams, J. S., Elliman, R. G., Ridgway, M. C., Jagadish, C., Ellingboe, S. L., Goldberg, R., Petravic, M., Wong, W. C., Dezhang, Z., Nygren, E., & Svensson, B. G. (1993). MeV implantation into semiconductors. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 80-81(PART 1), 507-513. https://doi.org/10.1016/0168-583X(93)96170-H

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abstract = "This paper reviews recent MeV implantation applications into semiconductors carried out at the Australian National University. Studies of damage, amorphization and dynamic defect annealing in silicon and GaAs/AlGaAs multilayer structures are emphasized, but selected examples of stopping measurements, diffusion, buried compound and alloy formation, electrical isolation and doping are also briefly treated. The particular advantages for solid state studies of controlling the nuclear energy deposition density distribution, and hence defect production, over large depths, are illustrated with appropriate examples.",

author = "Williams, \{J. S.\} and Elliman, \{R. G.\} and Ridgway, \{M. C.\} and C. Jagadish and Ellingboe, \{S. L.\} and R. Goldberg and M. Petravic and Wong, \{W. C.\} and Z. Dezhang and E. Nygren and Svensson, \{B. G.\}",

year = "1993",

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doi = "10.1016/0168-583X(93)96170-H",

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pages = "507--513",

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Williams, JS, Elliman, RG, Ridgway, MC, Jagadish, C, Ellingboe, SL, Goldberg, R, Petravic, M, Wong, WC, Dezhang, Z, Nygren, E & Svensson, BG 1993, 'MeV implantation into semiconductors', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 80-81, no. PART 1, pp. 507-513. https://doi.org/10.1016/0168-583X(93)96170-H

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T1 - MeV implantation into semiconductors

AU - Williams, J. S.

AU - Elliman, R. G.

AU - Ridgway, M. C.

AU - Jagadish, C.

AU - Ellingboe, S. L.

AU - Goldberg, R.

AU - Petravic, M.

AU - Wong, W. C.

AU - Dezhang, Z.

AU - Nygren, E.

AU - Svensson, B. G.

PY - 1993/6/3

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N2 - This paper reviews recent MeV implantation applications into semiconductors carried out at the Australian National University. Studies of damage, amorphization and dynamic defect annealing in silicon and GaAs/AlGaAs multilayer structures are emphasized, but selected examples of stopping measurements, diffusion, buried compound and alloy formation, electrical isolation and doping are also briefly treated. The particular advantages for solid state studies of controlling the nuclear energy deposition density distribution, and hence defect production, over large depths, are illustrated with appropriate examples.

AB - This paper reviews recent MeV implantation applications into semiconductors carried out at the Australian National University. Studies of damage, amorphization and dynamic defect annealing in silicon and GaAs/AlGaAs multilayer structures are emphasized, but selected examples of stopping measurements, diffusion, buried compound and alloy formation, electrical isolation and doping are also briefly treated. The particular advantages for solid state studies of controlling the nuclear energy deposition density distribution, and hence defect production, over large depths, are illustrated with appropriate examples.

UR - https://www.scopus.com/pages/publications/0039793766

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DO - 10.1016/0168-583X(93)96170-H

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VL - 80-81

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - PART 1

ER -

MeV implantation into semiconductors

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