MeV In-ion implantation for electrical isolation of p+-InP

M. C. Ridgway; R. G. Elliman; N. Hauser

doi:10.1016/0168-583X(93)90693-Z

MeV In-ion implantation for electrical isolation of p⁺-InP

M. C. Ridgway^*, R. G. Elliman, N. Hauser

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Electrical isolation of p⁺-InP by MeV In-ion implantation has been compared with a multiple low-energy, O-ion implant sequence. The large straggle associated with an MeV In-ion implant results in a disorder level of comparable uniformity to that achieved with an O-ion implant sequence. The two implant schemes yield similar maximum sheet resistance values (∼ 6×10⁶ Ω/sq) and thermal stabilities (400°C). However, the significant process simplification inherent with a single In-ion implant is advantageous.

Original language	English
Pages (from-to)	835-837
Number of pages	3
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	80-81
Issue number	PART 2
DOIs	https://doi.org/10.1016/0168-583X(93)90693-Z
Publication status	Published - 1993

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title = "MeV In-ion implantation for electrical isolation of p+-InP",

abstract = "Electrical isolation of p+-InP by MeV In-ion implantation has been compared with a multiple low-energy, O-ion implant sequence. The large straggle associated with an MeV In-ion implant results in a disorder level of comparable uniformity to that achieved with an O-ion implant sequence. The two implant schemes yield similar maximum sheet resistance values (∼ 6×106 Ω/sq) and thermal stabilities (400°C). However, the significant process simplification inherent with a single In-ion implant is advantageous.",

author = "Ridgway, {M. C.} and Elliman, {R. G.} and N. Hauser",

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doi = "10.1016/0168-583X(93)90693-Z",

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T1 - MeV In-ion implantation for electrical isolation of p+-InP

AU - Ridgway, M. C.

AU - Elliman, R. G.

AU - Hauser, N.

PY - 1993

Y1 - 1993

N2 - Electrical isolation of p+-InP by MeV In-ion implantation has been compared with a multiple low-energy, O-ion implant sequence. The large straggle associated with an MeV In-ion implant results in a disorder level of comparable uniformity to that achieved with an O-ion implant sequence. The two implant schemes yield similar maximum sheet resistance values (∼ 6×106 Ω/sq) and thermal stabilities (400°C). However, the significant process simplification inherent with a single In-ion implant is advantageous.

AB - Electrical isolation of p+-InP by MeV In-ion implantation has been compared with a multiple low-energy, O-ion implant sequence. The large straggle associated with an MeV In-ion implant results in a disorder level of comparable uniformity to that achieved with an O-ion implant sequence. The two implant schemes yield similar maximum sheet resistance values (∼ 6×106 Ω/sq) and thermal stabilities (400°C). However, the significant process simplification inherent with a single In-ion implant is advantageous.

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U2 - 10.1016/0168-583X(93)90693-Z

DO - 10.1016/0168-583X(93)90693-Z

M3 - Article

AN - SCOPUS:0001454910

SN - 0168-583X

VL - 80-81

SP - 835

EP - 837

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - PART 2

ER -

MeV In-ion implantation for electrical isolation of p⁺-InP

Abstract

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