MeV ion-beam annealing of semiconductor structures

J. S. Williams; M. C. Ridgway; R. G. Elliman; J. A. Davies; S. T. Johnson; G. R. Palmer

doi:10.1016/0168-583X(91)96240-L

MeV ion-beam annealing of semiconductor structures

J. S. Williams^*, M. C. Ridgway, R. G. Elliman, J. A. Davies, S. T. Johnson, G. R. Palmer

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

MeV heavy-ion beams have been used to induce epitaxial crystallization of amorphous Si, GaAs, InP, Ge-Si alloy and metal silicide layers. In all cases, the crystallization kinetics and the quality of the recrystallized layers have been compared with thermal-annealing behaviour. The most striking differences between the two annealing regimes (thermal and ion beam) have been observed for InP and high-dose In-implanted Si, where ion-beam annealing at low temperatures results in more extensive and higher-quality epitaxy than that achieved by thermal annealing.

Original language	English
Pages (from-to)	602-606
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	55
Issue number	1-4
DOIs	https://doi.org/10.1016/0168-583X(91)96240-L
Publication status	Published - 2 Apr 1991

Access to Document

10.1016/0168-583X(91)96240-L

Cite this

@article{59b774ba5eb94fee8e6c8eb7bc1d9a11,

title = "MeV ion-beam annealing of semiconductor structures",

abstract = "MeV heavy-ion beams have been used to induce epitaxial crystallization of amorphous Si, GaAs, InP, Ge-Si alloy and metal silicide layers. In all cases, the crystallization kinetics and the quality of the recrystallized layers have been compared with thermal-annealing behaviour. The most striking differences between the two annealing regimes (thermal and ion beam) have been observed for InP and high-dose In-implanted Si, where ion-beam annealing at low temperatures results in more extensive and higher-quality epitaxy than that achieved by thermal annealing.",

author = "Williams, {J. S.} and Ridgway, {M. C.} and Elliman, {R. G.} and Davies, {J. A.} and Johnson, {S. T.} and Palmer, {G. R.}",

year = "1991",

month = apr,

day = "2",

doi = "10.1016/0168-583X(91)96240-L",

language = "English",

volume = "55",

pages = "602--606",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - MeV ion-beam annealing of semiconductor structures

AU - Williams, J. S.

AU - Ridgway, M. C.

AU - Elliman, R. G.

AU - Davies, J. A.

AU - Johnson, S. T.

AU - Palmer, G. R.

PY - 1991/4/2

Y1 - 1991/4/2

N2 - MeV heavy-ion beams have been used to induce epitaxial crystallization of amorphous Si, GaAs, InP, Ge-Si alloy and metal silicide layers. In all cases, the crystallization kinetics and the quality of the recrystallized layers have been compared with thermal-annealing behaviour. The most striking differences between the two annealing regimes (thermal and ion beam) have been observed for InP and high-dose In-implanted Si, where ion-beam annealing at low temperatures results in more extensive and higher-quality epitaxy than that achieved by thermal annealing.

AB - MeV heavy-ion beams have been used to induce epitaxial crystallization of amorphous Si, GaAs, InP, Ge-Si alloy and metal silicide layers. In all cases, the crystallization kinetics and the quality of the recrystallized layers have been compared with thermal-annealing behaviour. The most striking differences between the two annealing regimes (thermal and ion beam) have been observed for InP and high-dose In-implanted Si, where ion-beam annealing at low temperatures results in more extensive and higher-quality epitaxy than that achieved by thermal annealing.

UR - http://www.scopus.com/inward/record.url?scp=3943059410&partnerID=8YFLogxK

U2 - 10.1016/0168-583X(91)96240-L

DO - 10.1016/0168-583X(91)96240-L

M3 - Article

AN - SCOPUS:3943059410

SN - 0168-583X

VL - 55

SP - 602

EP - 606

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

ER -

MeV ion-beam annealing of semiconductor structures

Abstract

Access to Document

Other files and links

Fingerprint

Cite this