MeV ion-beam annealing of semiconductor structures

J. S. Williams; M. C. Ridgway; R. G. Elliman; J. A. Davies; S. T. Johnson; G. R. Palmer

doi:10.1016/0168-583X(91)96240-L

MeV ion-beam annealing of semiconductor structures

J. S. Williams^*, M. C. Ridgway, R. G. Elliman, J. A. Davies, S. T. Johnson, G. R. Palmer

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

MeV heavy-ion beams have been used to induce epitaxial crystallization of amorphous Si, GaAs, InP, Ge-Si alloy and metal silicide layers. In all cases, the crystallization kinetics and the quality of the recrystallized layers have been compared with thermal-annealing behaviour. The most striking differences between the two annealing regimes (thermal and ion beam) have been observed for InP and high-dose In-implanted Si, where ion-beam annealing at low temperatures results in more extensive and higher-quality epitaxy than that achieved by thermal annealing.

Original language	English
Pages (from-to)	602-606
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	55
Issue number	1-4
DOIs	https://doi.org/10.1016/0168-583X(91)96240-L
Publication status	Published - 2 Apr 1991

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title = "MeV ion-beam annealing of semiconductor structures",

abstract = "MeV heavy-ion beams have been used to induce epitaxial crystallization of amorphous Si, GaAs, InP, Ge-Si alloy and metal silicide layers. In all cases, the crystallization kinetics and the quality of the recrystallized layers have been compared with thermal-annealing behaviour. The most striking differences between the two annealing regimes (thermal and ion beam) have been observed for InP and high-dose In-implanted Si, where ion-beam annealing at low temperatures results in more extensive and higher-quality epitaxy than that achieved by thermal annealing.",

author = "Williams, \{J. S.\} and Ridgway, \{M. C.\} and Elliman, \{R. G.\} and Davies, \{J. A.\} and Johnson, \{S. T.\} and Palmer, \{G. R.\}",

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doi = "10.1016/0168-583X(91)96240-L",

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T1 - MeV ion-beam annealing of semiconductor structures

AU - Williams, J. S.

AU - Ridgway, M. C.

AU - Elliman, R. G.

AU - Davies, J. A.

AU - Johnson, S. T.

AU - Palmer, G. R.

PY - 1991/4/2

Y1 - 1991/4/2

N2 - MeV heavy-ion beams have been used to induce epitaxial crystallization of amorphous Si, GaAs, InP, Ge-Si alloy and metal silicide layers. In all cases, the crystallization kinetics and the quality of the recrystallized layers have been compared with thermal-annealing behaviour. The most striking differences between the two annealing regimes (thermal and ion beam) have been observed for InP and high-dose In-implanted Si, where ion-beam annealing at low temperatures results in more extensive and higher-quality epitaxy than that achieved by thermal annealing.

AB - MeV heavy-ion beams have been used to induce epitaxial crystallization of amorphous Si, GaAs, InP, Ge-Si alloy and metal silicide layers. In all cases, the crystallization kinetics and the quality of the recrystallized layers have been compared with thermal-annealing behaviour. The most striking differences between the two annealing regimes (thermal and ion beam) have been observed for InP and high-dose In-implanted Si, where ion-beam annealing at low temperatures results in more extensive and higher-quality epitaxy than that achieved by thermal annealing.

UR - https://www.scopus.com/pages/publications/3943059410

U2 - 10.1016/0168-583X(91)96240-L

DO - 10.1016/0168-583X(91)96240-L

M3 - Article

AN - SCOPUS:3943059410

SN - 0168-583X

VL - 55

SP - 602

EP - 606

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

ER -

MeV ion-beam annealing of semiconductor structures

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