Micro- and macro-structure of implantation-induced disorder in Ge

C. J. Glover; M. C. Ridgway; A. P. Byrne; K. M. Yu; G. J. Foran; C. Clerc; J. L. Hansen; A. Nylandsted Larsen

doi:10.1016/S0168-583X(99)00887-3

Micro- and macro-structure of implantation-induced disorder in Ge

C. J. Glover^*, M. C. Ridgway, A. P. Byrne, K. M. Yu, G. J. Foran, C. Clerc, J. L. Hansen, A. Nylandsted Larsen

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

10 Citations (Scopus)

Abstract

The structure of ion implantation-induced damage in Ge substrates has been investigated with a combination of ion- and photon-based techniques including Rutherford backscattering spectrometry (RBS), perturbed angular correlation (PAC) and extended X-ray absorption fine structure (EXAFS) spectroscopy. For MeV Ge ion implantation at -196°C, the dose dependence of the decrease in local atomic order, determined from EXAFS and PAC, was compared to the number of displaced atoms determined from RBS measurements. An EXAFS determined damage fraction was shown to be a better estimate of amorphous fraction than the number of displaced atoms. PAC was used to elucidate the evolution of defective configurations, and was compared to the RBS and EXAFS results. A fit to the Overlap model with the overlap of two ion cascades for complete amorphization best described the experimental results.

Original language	English
Pages (from-to)	1033-1037
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	161
DOIs	https://doi.org/10.1016/S0168-583X(99)00887-3
Publication status	Published - Mar 2000
Event	The 14th International Conference on Ion Beam Analysis - 6th European Conference on Accelerators in Applied Research and Technology - Dresden, Ger Duration: 26 Jul 1999 → 30 Jul 1999

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@article{13192c1fd16c48c28e3e4c42851ca334,

title = "Micro- and macro-structure of implantation-induced disorder in Ge",

abstract = "The structure of ion implantation-induced damage in Ge substrates has been investigated with a combination of ion- and photon-based techniques including Rutherford backscattering spectrometry (RBS), perturbed angular correlation (PAC) and extended X-ray absorption fine structure (EXAFS) spectroscopy. For MeV Ge ion implantation at -196°C, the dose dependence of the decrease in local atomic order, determined from EXAFS and PAC, was compared to the number of displaced atoms determined from RBS measurements. An EXAFS determined damage fraction was shown to be a better estimate of amorphous fraction than the number of displaced atoms. PAC was used to elucidate the evolution of defective configurations, and was compared to the RBS and EXAFS results. A fit to the Overlap model with the overlap of two ion cascades for complete amorphization best described the experimental results.",

author = "Glover, {C. J.} and Ridgway, {M. C.} and Byrne, {A. P.} and Yu, {K. M.} and Foran, {G. J.} and C. Clerc and Hansen, {J. L.} and {Nylandsted Larsen}, A.",

year = "2000",

month = mar,

doi = "10.1016/S0168-583X(99)00887-3",

language = "English",

volume = "161",

pages = "1033--1037",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

note = "The 14th International Conference on Ion Beam Analysis - 6th European Conference on Accelerators in Applied Research and Technology ; Conference date: 26-07-1999 Through 30-07-1999",

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TY - JOUR

T1 - Micro- and macro-structure of implantation-induced disorder in Ge

AU - Glover, C. J.

AU - Ridgway, M. C.

AU - Byrne, A. P.

AU - Yu, K. M.

AU - Foran, G. J.

AU - Clerc, C.

AU - Hansen, J. L.

AU - Nylandsted Larsen, A.

PY - 2000/3

Y1 - 2000/3

N2 - The structure of ion implantation-induced damage in Ge substrates has been investigated with a combination of ion- and photon-based techniques including Rutherford backscattering spectrometry (RBS), perturbed angular correlation (PAC) and extended X-ray absorption fine structure (EXAFS) spectroscopy. For MeV Ge ion implantation at -196°C, the dose dependence of the decrease in local atomic order, determined from EXAFS and PAC, was compared to the number of displaced atoms determined from RBS measurements. An EXAFS determined damage fraction was shown to be a better estimate of amorphous fraction than the number of displaced atoms. PAC was used to elucidate the evolution of defective configurations, and was compared to the RBS and EXAFS results. A fit to the Overlap model with the overlap of two ion cascades for complete amorphization best described the experimental results.

AB - The structure of ion implantation-induced damage in Ge substrates has been investigated with a combination of ion- and photon-based techniques including Rutherford backscattering spectrometry (RBS), perturbed angular correlation (PAC) and extended X-ray absorption fine structure (EXAFS) spectroscopy. For MeV Ge ion implantation at -196°C, the dose dependence of the decrease in local atomic order, determined from EXAFS and PAC, was compared to the number of displaced atoms determined from RBS measurements. An EXAFS determined damage fraction was shown to be a better estimate of amorphous fraction than the number of displaced atoms. PAC was used to elucidate the evolution of defective configurations, and was compared to the RBS and EXAFS results. A fit to the Overlap model with the overlap of two ion cascades for complete amorphization best described the experimental results.

UR - http://www.scopus.com/inward/record.url?scp=0033901719&partnerID=8YFLogxK

U2 - 10.1016/S0168-583X(99)00887-3

DO - 10.1016/S0168-583X(99)00887-3

M3 - Conference article

SN - 0168-583X

VL - 161

SP - 1033

EP - 1037

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

T2 - The 14th International Conference on Ion Beam Analysis - 6th European Conference on Accelerators in Applied Research and Technology

Y2 - 26 July 1999 through 30 July 1999

ER -

Micro- and macro-structure of implantation-induced disorder in Ge

Abstract

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