Mid-infrared emission from InAs quantum dots grown by metal-organic vapor phase epitaxy

We have demonstrated mid-infrared emission from the self-assembled InAs quantum dots grown on InP substrate by metal-organic vapor phase epitaxy using low toxic tertiarybutylarsine and tertiarybutylphosphine as group V sources in pure nitrogen ambient. Emission wavelength of the InAs quantum dots has been extended to mid-infrared region by embedding the InAs quantum dots in graded In_xGa_1-xAs matrix layers. When compared with that of the InAs quantum dots grown on lattice matched In_0.53Ga _0.47As/InP matrix, emission wavelength of the InAs quantum dots red shifted by up to 370 nm when embedded the InAs quantum dots in graded In _0.53→0.8Ga_0.47→0.2As barriers. The longest emission wavelength of > 2.35 μm from the self-assembled InAs quantum dot structure has been measured at 77 K. The full-width at half-maximum of the photoluminescence emission spectrum of the InAs quantum dots is as narrow as 25.5 meV. The results achieved would be promising to high performance mid-infrared quantum dot lasers on InP substrate.