Mid-infrared octave spanning supercontinuum generation to 8.5 μm in silicon-germanium waveguides

Milan Sinobad; Christelle Monat; Barry Luther-Davies; Pan Ma; Stephen Madden; David J. Moss; Arnan Mitchell; David Allioux; Regis Orobtchouk; Salim Boutami; Jean Michel Hartmann; Jean Marc Fedeli; Christian Grillet

doi:10.1364/OPTICA.5.000360

Mid-infrared octave spanning supercontinuum generation to 8.5 μm in silicon-germanium waveguides

Milan Sinobad, Christelle Monat, Barry Luther-Davies, Pan Ma, Stephen Madden, David J. Moss, Arnan Mitchell, David Allioux, Regis Orobtchouk, Salim Boutami, Jean Michel Hartmann, Jean Marc Fedeli, Christian Grillet

Research output: Contribution to journal › Article › peer-review

152 Citations (Scopus)

Abstract

Efficient on-chip molecule and bio-agent detection can be achieved by accessing strong molecular absorption lines in the mid-infrared, but it requires high output power broadband mid-IR sources. Here, we report supercontinuum generation in an air-clad Si_0.6Ge_0.4∕Si waveguide that emits a broad spectrum spanning from 3.0 μm to 8.5 μm. These waveguides have anomalous dispersion and low propagation loss (<0.4 dB∕cm) in the mid-IR, which leads to a supercontinuum output with a high average power of more than 10 mW on-chip. The realization of broadband mid-IR sources with high spectral brightness makes the SiGe-on-Si platform promising for a wide range of applications.

Original language	English
Pages (from-to)	360-366
Number of pages	7
Journal	Optica
Volume	5
Issue number	4
DOIs	https://doi.org/10.1364/OPTICA.5.000360
Publication status	Published - 20 Apr 2018

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title = "Mid-infrared octave spanning supercontinuum generation to 8.5 μm in silicon-germanium waveguides",

abstract = "Efficient on-chip molecule and bio-agent detection can be achieved by accessing strong molecular absorption lines in the mid-infrared, but it requires high output power broadband mid-IR sources. Here, we report supercontinuum generation in an air-clad Si0.6Ge0.4∕Si waveguide that emits a broad spectrum spanning from 3.0 μm to 8.5 μm. These waveguides have anomalous dispersion and low propagation loss (<0.4 dB∕cm) in the mid-IR, which leads to a supercontinuum output with a high average power of more than 10 mW on-chip. The realization of broadband mid-IR sources with high spectral brightness makes the SiGe-on-Si platform promising for a wide range of applications.",

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T1 - Mid-infrared octave spanning supercontinuum generation to 8.5 μm in silicon-germanium waveguides

AU - Sinobad, Milan

AU - Monat, Christelle

AU - Luther-Davies, Barry

AU - Ma, Pan

AU - Madden, Stephen

AU - Moss, David J.

AU - Mitchell, Arnan

AU - Allioux, David

AU - Orobtchouk, Regis

AU - Boutami, Salim

AU - Hartmann, Jean Michel

AU - Fedeli, Jean Marc

AU - Grillet, Christian

PY - 2018/4/20

Y1 - 2018/4/20

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AB - Efficient on-chip molecule and bio-agent detection can be achieved by accessing strong molecular absorption lines in the mid-infrared, but it requires high output power broadband mid-IR sources. Here, we report supercontinuum generation in an air-clad Si0.6Ge0.4∕Si waveguide that emits a broad spectrum spanning from 3.0 μm to 8.5 μm. These waveguides have anomalous dispersion and low propagation loss (<0.4 dB∕cm) in the mid-IR, which leads to a supercontinuum output with a high average power of more than 10 mW on-chip. The realization of broadband mid-IR sources with high spectral brightness makes the SiGe-on-Si platform promising for a wide range of applications.

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Mid-infrared octave spanning supercontinuum generation to 8.5 μm in silicon-germanium waveguides

Abstract

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