Millisecond minority carrier lifetimes in n-type multicrystalline silicon

Andres Cuevas; Mark J. Kerr; Christian Samundsett; Francesca Ferrazza; Gianluca Coletti

doi:10.1063/1.1529089

Millisecond minority carrier lifetimes in n-type multicrystalline silicon

Andres Cuevas^*, Mark J. Kerr, Christian Samundsett, Francesca Ferrazza, Gianluca Coletti

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

79 Citations (Scopus)

Abstract

Millisecond minority carrier lifetimes were measured in n-type multicrystalline silicon (mc-Si) grown by directional solidification and subjected to phosphorus gettering. The lifetimes were found to decrease for lower resistivities. The demonstration of good stability under illumination for n-type mc-Si was reported.

Original language	English
Pages (from-to)	4952-4954
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	26
DOIs	https://doi.org/10.1063/1.1529089
Publication status	Published - 23 Dec 2002

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title = "Millisecond minority carrier lifetimes in n-type multicrystalline silicon",

abstract = "Millisecond minority carrier lifetimes were measured in n-type multicrystalline silicon (mc-Si) grown by directional solidification and subjected to phosphorus gettering. The lifetimes were found to decrease for lower resistivities. The demonstration of good stability under illumination for n-type mc-Si was reported.",

author = "Andres Cuevas and Kerr, {Mark J.} and Christian Samundsett and Francesca Ferrazza and Gianluca Coletti",

year = "2002",

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T1 - Millisecond minority carrier lifetimes in n-type multicrystalline silicon

AU - Cuevas, Andres

AU - Kerr, Mark J.

AU - Samundsett, Christian

AU - Ferrazza, Francesca

AU - Coletti, Gianluca

PY - 2002/12/23

Y1 - 2002/12/23

N2 - Millisecond minority carrier lifetimes were measured in n-type multicrystalline silicon (mc-Si) grown by directional solidification and subjected to phosphorus gettering. The lifetimes were found to decrease for lower resistivities. The demonstration of good stability under illumination for n-type mc-Si was reported.

AB - Millisecond minority carrier lifetimes were measured in n-type multicrystalline silicon (mc-Si) grown by directional solidification and subjected to phosphorus gettering. The lifetimes were found to decrease for lower resistivities. The demonstration of good stability under illumination for n-type mc-Si was reported.

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U2 - 10.1063/1.1529089

DO - 10.1063/1.1529089

M3 - Article

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VL - 81

SP - 4952

EP - 4954

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

ER -

Millisecond minority carrier lifetimes in n-type multicrystalline silicon

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